Results 161 to 170 of about 2,610 (194)
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Superlattices and Microstructures, 2020
Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated.
Asif Rasool +3 more
openaire +1 more source
Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated.
Asif Rasool +3 more
openaire +1 more source
Solid-State Electronics, 2015
Abstract A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices.
Fun-Tat Chin +6 more
openaire +1 more source
Abstract A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices.
Fun-Tat Chin +6 more
openaire +1 more source
2019 IEEE 31st International Conference on Microelectronics (MIEL), 2019
The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the
B. Attarimashalkoubeh, Y. Leblebici
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The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the
B. Attarimashalkoubeh, Y. Leblebici
openaire +1 more source
Advances in Science and Technology, 2014
Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters ...
Takumi Moriyama +4 more
openaire +1 more source
Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters ...
Takumi Moriyama +4 more
openaire +1 more source
Microelectronics Reliability, 2019
Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R) architecture and a TaOx-based ReRAM stack.
J.S. Bi +6 more
openaire +1 more source
Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R) architecture and a TaOx-based ReRAM stack.
J.S. Bi +6 more
openaire +1 more source
ECS Transactions, 2012
For high speed switching of ReRAM, we must elucidate a dominant parameter to control switching speed for a reset process (t reset). Since t reset is not necessarily determined by only one parameter, we proposed a method to get reset parameters which are expected to be related to t reset, low ...
Takumi Moriyama +3 more
openaire +1 more source
For high speed switching of ReRAM, we must elucidate a dominant parameter to control switching speed for a reset process (t reset). Since t reset is not necessarily determined by only one parameter, we proposed a method to get reset parameters which are expected to be related to t reset, low ...
Takumi Moriyama +3 more
openaire +1 more source
MRS Proceedings, 2014
ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated.
Ryosuke Ogata +4 more
openaire +1 more source
ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated.
Ryosuke Ogata +4 more
openaire +1 more source
Noble-Metal Based Random Alloy and Intermetallic Nanocrystals: Syntheses and Applications
Chemical Reviews, 2021Ming Zhou, Can Li, Jiye Fang
exaly