Results 171 to 180 of about 15,800,744 (205)
Microelectronic Engineering, 2013 We report the fabrication of resistive random access memory (ReRAM) on both Si and PET flexible substrates using TiO2 as the dielectric spacer between Ag electrodes. Ag/TiO2/Ag ReRAM shows unipolar switching behavior with a ramping rate of 50 mV.
Miyoung Kim, Minhee Yun, Deok-Hwang Kwon
exaly +2 more sources
Phase-Change and Redox-Based Resistive Switching Memories
Proceedings of the IEEE, 2015 This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM).
Rainer Waser +2 more
exaly +2 more sources
Advancements Towards Single Site Information Storage and Processing Using HfO2 Resistive Random Access Memory (ReRAM) [PDF]
, 2013 Resistive Random Access Memory (ReRAM) has attracted much attention among researchers due to its fast switching speeds, lower switching voltages, and feasible integration into industry compatible CMOS processing. These characteristics make ReRAM a viable
Hovish, Michael Quinlan
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ACS Applied Electronic Materials, 2019
Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capabi...
Cecilia Giovinazzo +5 more
openaire +4 more sources
Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capabi...
Cecilia Giovinazzo +5 more
openaire +4 more sources
Epitaxial CeO2 thin films for a mechanism study of resistive random access memory (ReRAM)
Journal of Solid State Electrochemistry, 2013A thin epitaxial CeO2 film was grown on a Cu(111) single crystal in order to investigate the mechanism of resistive memory/switching devices with an ultimately thin high-k dielectric film. A small amount of Pt was deposited on the CeO2 film and the Pt/CeO2/Cu structure was characterized by conductive atomic force microscopy and X-ray photoelectron ...
Michiko Yoshitake +4 more
openaire +1 more source
2019 IEEE 31st International Conference on Microelectronics (MIEL), 2019
The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the
B. Attarimashalkoubeh, Y. Leblebici
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The variation issue has been known as the main hurdle in the commercialization of ReRAM technology, which encourages further studies to find a solution to resolve this issue. Less variation in switching parameters meaning better switching uniformity is only possible through precise control over formation/annihilation of filaments during the set and the
B. Attarimashalkoubeh, Y. Leblebici
openaire +1 more source
Superlattices and Microstructures, 2020
Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated.
Asif Rasool +3 more
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Abstract The present study reports on the fabrication of non-volatile resistive switching (RS) memory device using MoO3 layers. Using a spray pyrolysis technique, different thicknesses of MoO3 thin films were deposited upon glass substrates maintaining the substrate temperature at 673 K and the physical properties were investigated.
Asif Rasool +3 more
openaire +1 more source
Advances in Science and Technology, 2014
Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters ...
Takumi Moriyama +4 more
openaire +1 more source
Which parameter dominantly decides the value of time required to reset ReRAM (treset) among possible parameters, the value of a low resistance (RL), voltage to induce reset (Vreset), and temperature to induce reset (Treset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters ...
Takumi Moriyama +4 more
openaire +1 more source
ECS Transactions, 2012
For high speed switching of ReRAM, we must elucidate a dominant parameter to control switching speed for a reset process (t reset). Since t reset is not necessarily determined by only one parameter, we proposed a method to get reset parameters which are expected to be related to t reset, low ...
Takumi Moriyama +3 more
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For high speed switching of ReRAM, we must elucidate a dominant parameter to control switching speed for a reset process (t reset). Since t reset is not necessarily determined by only one parameter, we proposed a method to get reset parameters which are expected to be related to t reset, low ...
Takumi Moriyama +3 more
openaire +1 more source