Results 181 to 190 of about 15,800,744 (205)

The Influence of Water Absorbed in Grain Boundary of a Polycrystalline NiO Layer on the Memory Characteristics of Pt/NiO/Pt Resistive Random Access Memory (ReRAM)

MRS Proceedings, 2014
ABSTRACTWe focused on the presence of water absorbed in the grain boundary of a polycrystalline transition metal oxide (TMO) film in an EL/poly-TMO/EL structure. The effect of supplying water to resistive random access memories (ReRAMs) of Pt/NiO/Pt structure on switching voltages and data retention characteristics was investigated.
Ryosuke Ogata, Masataka Yoshihara, Naohiro Murayama, Satoru Kishida, Kentaro Kinoshita   +4 more
openaire   +1 more source

Multi-scale modeling of resistive random access memories (ReRAM)

Modélisation multi-échelles des mémoires de type résistives (ReRAM) Un modèle de commutation de mémoires résistives (ReRAM) est présenté. Celui-ci est basé sur deux hypothèses : (1) la commutation résistive est causée par des changements qui se produisent dans la zone étroite (région active) du filament conducteur sous l'influence du ...
openaire   +1 more source

Vertically oriented 2D layered perovskite-based resistive random access memory (ReRAM) crossbar arrays

Current Applied Physics, 2022
Younghoon Kim, Seung Jae Baik, Hyunjung Shin   +2 more
openaire   +1 more source

Multi-valued logic synthesis for Resistive Random Access Memory (RERAM) based in-memory computing

2018
In-memory computing is a growing field of research which involves storing and processing of data at the memory. Resistive random access memory devices (RERAM) are among the class of memories which enable in-memory computing. RERAM devices are known to implement the material implication operation.
openaire   +1 more source

Reproducing Resistive Switching Effect by Soret and Fick Diffusion in Resistive Random Access Memory (ReRAM)

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials, 2015
K. Kinoshita, R. Koishi, T. Moriyama, K. Kawano, H. Miyashita, S. S. Lee, S. Kishida   +6 more
openaire   +1 more source

Effects of the Molecular Chain Length of Polyimide on the Characteristics of Organic Resistive Random Access Memories

IEEE Transactions on Electron Devices, 2020
Chi-Chang Wu, Wen-Luh Yang, Wen-Fa Wu
exaly  

The Spectral Response of the Dual Microdisk Resonator Based on BaTiO3 Resistive Random Access Memory

Micromachines, 2022
Cheng-Liang Huang, Ricky Wenkuei Chuang
exaly  

Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials, 2015
K. Shiraishi, M.Y. Yang, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, T. Ohyanagi, N. Takaura, M. Niwa, B.M. Kope, Y. Nishi   +10 more
openaire   +1 more source

Improving Retention Properties by Thermal Imidization for Polyimide-Based Nonvolatile Resistive Random Access Memories

Microelectronics Reliability, 2015
Yu-Hsien Lin, Chi-Chang Wu, Wen-Luh Yang
exaly  

Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices

2023
KOTY DEVI, YANG QINGYUN, YAN HONGWEN, MIYAZOE HIROYUKI, ANDO TAKASHI, HOPSTAKEN MARINUS JOHANNES PETRUS   +5 more
openaire   +1 more source