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Resistive Random Access Memory (ReRAM) Based on Metal Oxides
Proceedings of the IEEE, 2010In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also
Hiroyuki Akinaga, Hisashi Shima
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Solid-State Electronics, 2015
Abstract A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices.
Fun-Tat Chin +6 more
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Abstract A limited copper (Cu)-source Cu:SiO2 switching layer composed of various Cu concentrations was fabricated using a chemical soaking (CS) technique. The switching layer was then studied for developing applications in resistive random access memory (ReRAM) devices.
Fun-Tat Chin +6 more
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Integrated Optics: Devices, Materials, and Technologies XXV, 2021
The transparent ITO/BaTiO3/ITO Resistive Random-Access Memory (ReRAM) vertically integrated with bus waveguides situated underneath is successfully realized as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate. The radio-frequency sputtering technique was adopted for the subsequent depositions of the transparent ITO and
Ricky W. Chuang +3 more
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The transparent ITO/BaTiO3/ITO Resistive Random-Access Memory (ReRAM) vertically integrated with bus waveguides situated underneath is successfully realized as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate. The radio-frequency sputtering technique was adopted for the subsequent depositions of the transparent ITO and
Ricky W. Chuang +3 more
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Integrated Optics: Devices, Materials, and Technologies XXIV, 2020
The integration of the transparent ITO/NiO/ITO Resistive Random-Access Memory (ReRAM) with vertically-coupled bus waveguides, which is ultimately emerged as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate, is successfully realized.
Ricky W. Chuang +2 more
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The integration of the transparent ITO/NiO/ITO Resistive Random-Access Memory (ReRAM) with vertically-coupled bus waveguides, which is ultimately emerged as a ReRAM-based microdisk resonator fabricated on lithium niobate (LiNbO3) substrate, is successfully realized.
Ricky W. Chuang +2 more
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Integrated Optics: Devices, Materials, and Technologies XXIV, 2020
In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile ...
Ricky W. Chuang +3 more
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In recent years many research groups have delved into the research and development of Resistive Random-Access Memory (ReRAM) which has the combined advantages of fast read/write speed, simplicity in structure, small device size and density, low activation bias voltage, low power consumption, allowably many periodic operating cycles and nonvolatile ...
Ricky W. Chuang +3 more
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Microelectronics Reliability, 2019
Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R) architecture and a TaOx-based ReRAM stack.
J.S. Bi +6 more
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Abstract Experiments on total ionizing dose (TID) by cobalt-60 and single event effects (SEE) by pulsed laser and heavy ions were conducted on a 4 Mb commercial ReRAM from Fujitsu. The bit cell features two-transistor-two-resistor (2T2R) architecture and a TaOx-based ReRAM stack.
J.S. Bi +6 more
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Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory
Physical Sciences Reviews, 2016 Multilevel per cell (MLC) storage in resistive random access memory (ReRAM) is attractive in achieving high-density and low-cost memory and will be required in future.
Hyunsang Hwang, Amit Prakash
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The mechanism underlying silicon oxide based resistive random-access memory (ReRAM)
Nanotechnology, 2020Abstract In this work, we have inspected the theoretical resistive switching properties of two ReRAM models based on heterojunction structures of Cu/SiO x nanoparticles (NPs)/Si and Si/SiO
Yu-Li Chen +5 more
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