Results 21 to 30 of about 9,468 (178)

Crossbar-based memristive logic-in-memory architecture [PDF]

open access: yes, 2017
The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years.
Abustelema, Angel   +4 more
core   +2 more sources

Emulating long-term synaptic dynamics with memristive devices [PDF]

open access: yes, 2016
The potential of memristive devices is often seeing in implementing neuromorphic architectures for achieving brain-like computation. However, the designing procedures do not allow for extended manipulation of the material, unlike CMOS technology, the ...
Berdan, Radu   +5 more
core   +2 more sources

Resistive switching in ZrO2 films: physical mechanism for filament formation and dissolution [PDF]

open access: yes, 2014
Resistive switching devices, also called memristors, have attracted much attention due to their potential memory, logic and even neuromorphic applications.
MacLaren, DA   +2 more
core   +1 more source

A nanoscale analysis method to reveal oxygen exchange between environment, oxide, and electrodes in ReRAM devices

open access: yesAPL Materials, 2021
The limited sensitivity of existing analysis techniques at the nanometer scale makes it challenging to systematically examine the complex interactions in redox-based resistive random access memory (ReRAM) devices.
Horatio R. J. Cox   +7 more
doaj   +1 more source

RRAM variability and its mitigation schemes [PDF]

open access: yes, 2016
Emerging technologies such as RRAMs are attracting significant attention due to their tempting characteristics such as high scalability, CMOS compatibility and non-volatility to replace the current conventional memories.
Amat, Esteve   +3 more
core   +1 more source

Endurance of 2 Mbit Based BEOL Integrated ReRAM

open access: yesIEEE Access, 2022
In this work, we experimentally characterize the endurance of 2 Mbit resistive switching random access memories (ReRAMs) from a 16 MBit test-chip. Here, very rare failure events where the memory cells become stuck in the low-resistive state (LRS) are ...
Nils Kopperberg   +6 more
doaj   +1 more source

Metal oxide semiconductor nanomembrane-based soft unnoticeable multifunctional electronics for wearable human-machine interfaces [PDF]

open access: yes, 2019
Wearable human-machine interfaces (HMIs) are an important class of devices that enable human and machine interaction and teaming. Recent advances in electronics, materials, and mechanical designs have offered avenues toward wearable HMI devices. However,
Chen, Jie   +9 more
core   +1 more source

A Memristor as Multi-Bit Memory: Feasibility Analysis [PDF]

open access: yes, 2015
The use of emerging memristor materials for advanced electrical devices such as multi-valued logic is expected to outperform today's binary logic digital technologies.
Bass, O., Fish, A., Naveh, D.
core   +2 more sources

Reliability Aspects of 28 nm BEOL‐Integrated Resistive Switching Random Access Memory

open access: yesPhysica Status Solidi (a), 2023
Approaching the application of redox‐based resistive switching random access memory (ReRAM), the research focus shifts more and more toward different aspects of reliability.
S. Wiefels   +6 more
semanticscholar   +1 more source

Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

open access: yesDiscrete Dynamics in Nature and Society, 2015
There are high demands for research of new device with greater accessing speed and stability to replace the current SRAM storage cell. The resistive random access memory (ReRAM) is a metal oxide which is based on nonvolatile memory device possessing the ...
Peng Hai-yun, Zhou Wen-gang
doaj   +1 more source

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