Results 181 to 190 of about 11,242 (219)

Electrothermal Study on Resistive Random Access Memory (RRAM) Arrays

2019 International Conference on Electromagnetics in Advanced Applications (ICEAA), 2019
In this paper, the electrothermal performance of large-scale resistive random access memory (RRAM) array is studied using an in-house developed parallel simulator. To realize the capability for parallel simulation, a high-performance computing scheme based on the mixed finite element method and finite volume method combining the domain decomposition ...
Da-Wei Wang, Wen-Yan Yin, Wenchao Chen, Wen-Sheng Zhao   +3 more
openaire   +1 more source

Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor

MRS Proceedings, 2011
ABSTRACTThis work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s).
Rocha, P. F., Gomes, Henrique L., Kiazadeh, Asal, Chen, Q., De Leeuw, D. M., Meskers, S. C. J.   +5 more
openaire   +3 more sources

Metal-oxide resistive random access memory (RRAM) technology: Material and operation details and ramifications

Advances in Non-Volatile Memory and Storage Technology, 2019
G. Bersuker, D.C. Gilmer, D. Veksler
openaire   +2 more sources

Role of point defects in hybrid phase TiO2 for resistive random-access memory (RRAM)

Materials Research Express, 2019
TiO2 thin films based resistive random-access memory was examined for resistive switching behavior. TiO2 thin films were deposited on FTO glass substrate using single step hydro-thermal method with different synthesis parameters.
M. Irshad, A. Abbas, H. H. Qazi, M. Aziz, M. Shah, A. Ahmed, M. Idrees   +6 more
semanticscholar   +1 more source

Resistive switching characteristics of novel Al-inserted resistive random access memory (RRAM)

2010 IEEE Nanotechnology Materials and Devices Conference, 2010
Resistive switching characteristics are investigated for aluminum (Al) inserted NiO resistive switching random access memory (RRAM) by adapting cross-pointed structure. In order to evaluate high-density RRAM with low switching current, we have shown the relationships between various important analytical parameters and reset current reduction.
Kyung-Chang Ryoo, Jeong-Hoon Oh, Sung-hun Jung, Byung-Gook Park   +3 more
openaire   +1 more source

Multibit, Lead‐Free Cs2SnI6 Resistive Random Access Memory with Self‐Compliance for Improved Accuracy in Binary Neural Network Application

Advanced Functional Materials, 2023
In the realm of neuromorphic computing, integrating Binary Neural Networks (BNN) with non‐volatile memory based on emerging materials can be a promising avenue for introducing novel functionalities.
Ajit Kumar, Mokurala Krishnaiah, Jinwoo Park, Dhananjay Mishra, Bidyashakti Dash, Hyeon‐Bin Jo, Geun Lee, S. Youn, H. Kim, Sung Hun Jin   +9 more
semanticscholar   +1 more source

Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices.

ACS Applied Materials and Interfaces, 2023
Resistive random-access memory (RRAM) is a promising technology for data storage and neuromorphic computing; however, cycle-to-cycle and device-to-device variability limits its widespread adoption and high-volume manufacturability.
Il-Kwon Oh, Asir Intisar Khan, S. Qin, Yujin Lee, H. P. Wong, E. Pop, S. Bent   +6 more
semanticscholar   +1 more source

Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)

Digest. International Electron Devices Meeting,, 2003
A novel nonvolatile memory Colossal Magnetoresistive (CMR) thin film resistor for Resistance RAM (RRAM) application has been characterized. A 1RIT RRAM test circuit based on 0.5 /spl mu/m CMOS has been fabricated. RRAM is a low power high-speed memory technology. The memory cell programming pulse is less than 5 V and pulse width as narrow as 10 ns. The
W.W. Zhuang, W. Pan, B.D. Ulrich, J.J. Lee, L. Stecker, A. Burmaster, D.R. Evans, S.T. Hsu, M. Tajiri, A. Shimaoka, K. Inoue, T. Naka, N. Awaya, A. Sakiyama, Y. Wang, S.Q. Liu, N.J. Wu, A. Ignatiev   +17 more
openaire   +1 more source

High-performance Ta2O5-based resistive random-access memory with embedded graphene quantum dots and Pt–Ag composite active layer

Applied Physics Letters, 2023
Resistive random-access memory (RRAM) has garnered significant interest in developing nonvolatile memory systems due to its ability to provide external field tunable resistive states with fast speed and low power consumption. This tunable resistive state
Renzhi Wang, K. Chang, Xinhui Zhao, Xin-Xin Yu, Saiqun Ma, Zhuyikang Zhao, Hui Wang   +6 more
semanticscholar   +1 more source

Interface-Modified Unipolar Resistive Random Access Memory (RRAM) Structure for Low-Power Application

Journal of Nanoscience and Nanotechnology, 2012
An interface-engineered resistive random access memory (RRAM) using bilayer transition metal oxide (TMO) is presented for improving unipolar resistive-switching characteristics. The experiment and simulation data show that better resistive switching characteristics and superb uniformity can be realized by inserting a thin AIOx insertion layer between ...
Ryoo, Kyung-Chang, Oh, Jeong-Hoon, Jung, Sunghun, Jeong, Hongsik, Park, Byung-Gook   +4 more
openaire   +3 more sources