Results 171 to 180 of about 61,702 (200)

RTS and 1/f Noise in Submicron MOSFETs

AIP Conference Proceedings, 2007
The capture and emission time constants dependence on drain current for constant gate voltage and variable drain voltage show that probability for charge carrier capture decreases with increasing lateral electric field while emission process is independent on lateral field intensity.
J. Sikula, J. Pavelka, J. Havranek, J. Hlavka, M. Tacano, M. Toita   +5 more
openaire   +1 more source

Broadband noise adaptation of RT at speech frequencies

The Journal of the Acoustical Society of America, 1980
As a follow-up to previous studies, 62 college students were adapted to 7 min of random noise. Changes in reaction time (RT) were measured at 0.5, 1, and 3 kHz. Adaptation as measured by an increase in reaction time was measured at all three frequencies. There was a significant decline in RT adaptation as frequency increased. Relation to other findings
James M. Davis, Ernest M. Weiler, Tom Goldman, Walter Gunn   +3 more
openaire   +1 more source

RTS and 1/f Noise in Flash Memory

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2007
This work investigates the RTS noise in Flash memory from the perspective of a single cell. In this study, RTS noise in a cell is measured in the frequency domain instead of time domain to increase the efficient identification of individual RTS traps over a broader range of trap lifetime, from seconds to mus in comparison to the conventional time ...
Sing-Rong Li, Yin-Lung R. Lu, William McMahon, Yung-Huei Lee, Neal Mielke   +4 more
openaire   +1 more source

RTS Noise Characterization in Single-Photon Avalanche Diodes

IEEE Electron Device Letters, 2010
Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-μm CMOS technology and in four proton-irradiated SPADs designed and fabricated in 0.35-μm CMOS technology.
Mohammad Azim Karami, Lucio Carrara, Cristiano Niclass, Matthew Fishburn, Edoardo Charbon   +4 more
openaire   +1 more source

RTS Noise in Optoelectronic Coupled Devices

AIP Conference Proceedings, 2005
The low frequency noise of optoelectronic coupled devices (OCDs) was measured in the system designed and constructed by the authors. The RTS noise was observed in some devices. The analysis of RTS noise in time and frequency domains is presented. The values of fRTS were found from spectrum and from observed RTS noise on the base of tup and tdown ...
openaire   +1 more source

RTS noise amplitude and electron concentration in MOSFETs

2010 27th International Conference on Microelectronics Proceedings, 2010
Random Telegraph Signal (RTS) noise was measured in submicron MOSFETs under various biasing conditions from sub threshold to inversion region and dependence of amplitude and mean time of capture and emission on electric field and electron concentration analyzed.
J. Pavelka, J. Sikula, M. Chvatal, M. Tacano, M. Toita   +4 more
openaire   +1 more source

RTS noise characterization of HfOx RRAM in high resistive state

Solid-State Electronics, 2013
Abstract In this paper we analyze Random Telegraph Signal (RTS) noise and Power Spectral Density (PSD) in hafnium-based RRAMs. RTS measured in HRS exhibits fast and slow multilevel switching events. RTS characteristics are examined through novel color-coded time-lag plots and Hidden Markov Model (HMM) time-series analyses.
PUGLISI, Francesco Maria, PAVAN, Paolo, PADOVANI, ANDREA, LARCHER, Luca, G. Bersuker   +4 more
openaire   +1 more source

Model of the RTS noise in semiconductor devices

AIP Conference Proceedings, 1993
The RTS noise is assumed to be induced by quantum transitions of charge carriers from trap energy levels to both the conductivity and the valence bands. The charge state of the trap controls the channel conductivity in MOSFET’s. Formulas for the time constants describing the RTS noise in a general case of both n‐type and p‐type semiconductors have been
M. Sikulova, J. Sikula
openaire   +1 more source

Zero Cross Analysis of RTS Noise

AIP Conference Proceedings, 2005
RTS noise of Si MOSFETs and GaN HFET was analysed by means of zero cross method. Noise spectral density of crossing events in 1 ms to 100s windows was flat over 10−5 to 103 frequency range without apparent 1/f noise. The fluctuation of crossing rate was same in every sample, although other noise components next to RTS noise are quite different in Si ...
openaire   +1 more source

1/f noise and RTS in advanced bipolar technologies

SPIE Proceedings, 2003
The low-frequency noise observed on advanced junction bipolar transistors consist of 1/f noise as well as Random telegraph Signals (RTS). In relatively small emitter-base junction areas, RTS is seen in the spectra which can be differentiated from the typical generation-recombination (gr) noise through time domain analysis. For most cases, the 1/f noise
Zeynep Celik-Butler, Md Mazhar Ul Hoque, Enhai Zhao, Darby Lan, Doug Weiser, Joe Trogolo, Keith Green   +6 more
openaire   +1 more source