Results 91 to 100 of about 657,960 (297)

Work function modulation of electrodes contacted to molybdenum disulfide using an attached metal pad

AIP Advances, 2019
The transport properties of electronic devices fabricated using two-dimensional materials are severely affected by the Schottky barrier at the contact of an electrode.
Yoshihiro Shimazu, Tatsuya Iwabuchi, Kensuke Arai   +2 more
doaj   +1 more source

Computation‐Less, Bias‐Free, and Ultra‐Broadband Photodetector for On‐Chip Edge Extraction

Advanced Materials, EarlyView.
A computation‐less, bias‐free, and ultra‐broadband photodetector directly converts local optical‐intensity gradients into signed photocurrents through a position‐dependent bi‐directional photoresponse. This intrinsic physical sensing mechanism enables single‐pixel edge extraction from the near‐infrared to the long‐wave infrared at room temperature ...
Jintao Fu, Hao Jiang, Xingsi Liu, Fakun Wang, Yang Peng, Qi Jie Wang, Weibo Gao, Xingzhan Wei, Cheng‐Wei Qiu   +8 more
wiley   +1 more source

Spectral Selective and Low‐Noise Thin‐Film Organic Photodetectors Enabled by Electric‐Field Engineering

Advanced Materials, EarlyView.
Molecular doping redistributes the internal electric field in organic photodetectors, providing a new degree of freedom to spatially control carrier transport and collection. Simulations and experiments reveal distinct transport pathways for injected and photogenerated carriers, enabling low dark current under reverse bias and wavelength‐selective ...
Jingwei Yi, Yi Yang, Vahid Mahdikhah, Yibo Shi, Jordan Shanahan, Apurva Gadikar, Yusen Pei, Xinyun Dong, Jacob P Mauthe, Reece Henry, Kenan Gundogdu, Brendan T. O'Connor, Aram Amassian, Harald Ade, Wei You, Franky So   +15 more
wiley   +1 more source

Spintronic and plasmonic applications of electrodeposition on semiconductors

, 2009
In this thesis, metal electrodeposition on semiconductor substrates is investigated. We show that electrodeposition of metals on n-type Si and Ge is an excellent method to create Schottky barriers and that this method has a number of unique advantages ...
Li, X.
core   +1 more source

Efficient Sunlight Degradation of Wide‐Spectrum Antibiotics Through Enhanced Charge Separation in SnTCPP NPs‐Nb2C Schottky Heterojunction: Ultrafast Carrier Dynamic Study

Advanced Materials Interfaces, EarlyView.
Due to enhanced charge transfer and carrier mobility on the surface, the SnTCPP NPs‐Nb2C Schottky heterojunctions demonstrate exceptional sunlight‐driven catalytic activity toward tetracycline antibiotics and ofloxacin degradation, achieving a removal efficiency of up to 99.9% within 60 min of irradiation, both in model wastewater and natural water ...
Juanxuan Guo, Sheng Liao, Ranye Liao, Xinyan Ke, Ming‐De Li, Li Dang   +5 more
wiley   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Impact of Nickel Diffusion on Leakage Current Degradation in β‐Ga2O3 Schottky Barrier Diodes

Information & Functional Materials
Beta‐phase gallium oxide (β‐Ga2O3) is a promising ultra‐wide bandgap semiconductor for high‐power electronics, where the optimal selection of Schottky electrodes enables the achievement of elevated Schottky barrier heights and markedly enhanced device ...
Ziyi Wang, Zhu Jin, Defan Wu, Xiliang Luo, Zhongyi Lin, Yingying Liu, Ning Xia, Cheng Li, Hui Zhang, Deren Yang   +9 more
doaj   +1 more source

Schottky contacts to In2O3

APL Materials, 2014
n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation
H. von Wenckstern, D. Splith, F. Schmidt, M. Grundmann, O. Bierwagen, J. S. Speck   +5 more
doaj   +1 more source

Schottky barrier light emitting diode in standard CMOS technology

, 2011
Schottky barrier light emitting diode is designed and fabricated in CMOS technology. Stable Electro-luminescent emission is observed. The emission exhibits widespread spectral characteristics with nearly flatten peak in visible light range from673nm ...
Beiju Huang, Zan Dong, Wang, Wei, Guo, Weilian, Zanyun Zhang, Chen, Hongda, Weilian Guo, Hongda Chen, Dong, Zan, Wei Wang, Huang, B.(bjhuang@semi.ac.cn), Huang, Beiju, Zhang, Zanyun   +12 more
core   +1 more source

Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics

Advanced Materials Technologies, EarlyView.
In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald, Ali Nawaz, Amandeep Singh, Prashant Sonar   +3 more
wiley   +1 more source