Results 101 to 110 of about 657,960 (297)
Recent Advances in Light‐Addressable Electrochemistry for Spatially Resolved Applications
Advanced Materials Technologies, EarlyView.This comprehensive review highlights light‐addressable electrochemistry as a powerful tool that uses light to control localized chemical reactions on unstructured semiconductor surfaces. The work evaluates advanced strategies to optimize electrode materials for enhanced spatial resolution and stability. Furthermore, it showcases diverse applications in
Nhi Trang Vo +2 more
wiley +1 more source
Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
Physical Review X, 2012 Using current-voltage (I-V), capacitance-voltage (C-V), and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one ...
S. Tongay +5 more
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Advanced Optical Materials, EarlyView.This work presents an electrically controllable approach to spin–valley polarization in monolayer WS2 by integrating it with a dual‐mode liquid crystal laser. Applying an external field triggers phase transitions that switch the laser emission between helicity‐defined band‐edge lasing and unpolarized random lasing.
Yu‐Chuan Tsao +3 more
wiley +1 more source
The Scientific World Journal, 2013 The transient photovoltaic (PV) characteristic of HgCdTe PV array is studied using an ultrafast laser. The photoresponse shows an apparent negative valley first, then it evolves into a positive peak.
Haoyang Cui +4 more
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An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors
, 2009 The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase ...
Yang H +7 more
core
A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms
, 2020 We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a ...
Dimitrijev, Sima, Nicholls, Jordan R
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Advanced Science, EarlyView.This study employs a nanochain engineering approach combined with an in situ oxidation strategy to fabricate self‐insulating iron‐based magnetic nanochains, addressing the challenge of balancing magnetic coupling and electrical insulation in soft magnetic materials.
Dingrong Zuo +8 more
wiley +1 more source
International Journal of Energetica, 2020 In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on current-voltage (I-V) measurement in the temperature range ( 300 K- 425 K).
Ali Sadoun, Imad Kemerchou
doaj
A Study of Schottky Barrier Height Inhomogeneity on In/P-Silicon [PDF]
Журнал нано- та електронної фізики, 2011 The current-voltage characteristics of In/p-Si Schottky diode measured over a temperature range of 120-360 K have been interpreted on the basis of thermionic emission across an inhomogenous Schottky contact. The experiment shows that the apparent barrier
B.P. Modi
doaj
Citation: 'Schottky barrier' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.08870 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire +1 more source