Results 61 to 70 of about 657,960 (297)

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Materials Research Express, 2020
Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky ...
Noorah A Al-Ahmadi
doaj   +1 more source

Hybrid Ferroelectric Tunnel Junctions with Intrinsic Nonlinearity and Self‐Rectification via Interfacial Reconstruction

Advanced Functional Materials, EarlyView.
Rapid thermal annealing reconstructs the BCFO/Nb:STO interface into an atomically thin reconstructed interfacial layer, which reshapes the tunneling barrier and converts a high‐TER ferroelectric tunnel junction into an intrinsically nonlinear, self‐rectifying device.
Hojin Lee, Joonbong Lee, Jinho Byun, Sang‐Hyeok Yang, A young Cho, Sangwoo Lee, Dae Haa Ryu, Hyunbin Chung, Hee Seo Yun, Moon Seop Choi, Yesul Choi, Sungkyun Park, Min‐Hyung Jung, Dongwon Lee, Yoon‐Uk Heo, Hu Young Jeong, Hongseok Kim, Shinhyeong Lee, Yunseok Kim, Young‐Min Kim, Jaekwang Lee, Taekjib Choi   +21 more
wiley   +1 more source

The Research of Drain Induced Barrier Lower Effect for SOI Strained Silicon Schottky Source/Drain MOSFET with High-k Gate Dielectric

四川大学学报. 自然科学版, 2017
The SOI strained silicon schottky source/drain MOSFET with high-k gate dielectric is a potential device realizing small size MOSFET, which combines the advantages of strained silicon engineering, high-k gate dielectric, SOI structure and schottky source ...
XU Li-Jun, ZHANG He-Ming, YANG Jin-Yong
doaj  

Schottky barrier height measurements of Cu/Si(001), Ag/Si(001), and Au/Si(001) interfaces utilizing ballistic electron emission microscopy and ballistic hole emission microscopy

AIP Advances, 2013
The Schottky barrier heights of both n and p doped Cu/Si(001), Ag/Si(001), and Au/Si(001) diodes were measured using ballistic electron emission microscopy and ballistic hole emission microscopy (BHEM), respectively.
Robert Balsano, Akitomo Matsubayashi, Vincent P. LaBella   +2 more
doaj   +1 more source

Conjugated Porphyrin Polymer With Superior Charge Transfer for Photodynamic‐Immunomodulatory Prevention of CIED Infection in Diabetes

Advanced Healthcare Materials, EarlyView.
Under NIR irradiation, PTCPP generates ROS to eliminate MRSA biofilms and promote M1 macrophage polarization for phagocytosis. After bacterial clearance, the material is phagocytosed by macrophages, shifting their polarization to M2 phenotype via metabolic reprogramming, which synergistically enhances anti‐infection therapy and wound healing.
Honghao Ma, Jinguo Xu, Rongrong Gu, Chuanhui Dong, Te Chen, Yi Mu, Jing Zhu, Yating Wang, Wen Wang, Yingying Zhang, Hongyu Ma, Xiaochen Wang, Sheng Ye, Cheng Cheng   +13 more
wiley   +1 more source

Graphenic Carbon: A Novel Material to Improve the Reliability of Metal-Silicon Contacts

IEEE Journal of the Electron Devices Society, 2017
Contact resistance and thermal degradation of metal-silicon contacts are major challenges in nanoscale CMOS as well as in power device applications. Titanium silicide (TiSi) is commonly used to establish low-barrier height contacts to silicon, in state ...
Max Stelzer, Moritz Jung, Franz Kreupl
doaj   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Tunable Schottky barrier height and surface potential by using hydrogen ions

, 2014
In this research work, hydrogen ion can be used for Schottky barrier height and surface potential tuning with specific power. The current output of Ohmic and Schottky contacted device would be enhanced from 8.25 μA to 171 μA and 2.84 pA to 1.3 μA ...
Yeh, P. H., Hsu, J. K.; Lin, T. Y.; Lai, C. Y.; Chien, T. C.; Song, J. H.; Yeh, P. H.   +1 more
core   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source