Results 41 to 50 of about 9,132 (212)

Schottky Contact of Gallium on p-Type Silicon [PDF]

Журнал нано- та електронної фізики, 2011
The evolution of barrier at Schottky contact and its stabilization to value characterized by the barrier height and unambiguous measurement is still being curiously perused as they hold the key control and manufacture of tailor made Schottky devices for ...
B.P. Modi, K.D. Patel
doaj  

Powering Nanocrystal‐Based Heat Engines With Light‐Emitting Metasurfaces That Influence Their Temperature

Advanced Functional Materials, EarlyView.
Metasurfaces and other structured photonic environments can dramatically modify the absorption and/or light emission of semiconductors. However, the consequences of these changes on the temperature of the system are not well understood. The authors address this problem for colloidal nanocrystals and leverage their findings to convert light into ...
Hugo Kowalczyk, Yihao Yuan, Augustin Caillas, Amel Saidoun, Roméo Bonnet, Pascal Filloux, Emmanuel Lhuillier, Aloyse Degiron   +7 more
wiley   +1 more source

Metal-semiconductor Schottky diode with Landauer’s formalism

Nano Express
The Schottky barrier diode is a unipolar electronic device formed by the heterojunction of a metal and a semiconductor, widely used in various electronic and optoelectronic applications.
Antonio Di Bartolomeo, Kimberly Intonti, Luciano Peluso, Rosangela Di Marco, Gerardo Vocca, Francesco Romeo, Filippo Giubileo, Alessandro Grillo, Elif Orhan   +8 more
doaj   +1 more source

MXene Wrapped Magnetic Mesocrystals for Durable Redox Catalytic Cancer Therapy and Responsive MRI

Advanced Functional Materials, EarlyView.
Conformal wrapping of ultrathin Ti3C2Tx MXene nanosheets on Fe3O4 mesocrystals creates topology‐stabilized Schottky junctions that direct photoinduced electron transfer under NIR irradiation. The unique architecture sustains Fenton catalysis, promotes continuous hydroxyl radical production, and provides photo‐responsive MRI contrast.
Min Jun Ko, Seongchan Kim, Jun‐Hyeok Han, Sanghee Lee, Minji Ahn, Hong En Fu, Young Jun Jang, Yoo Sang Jeon, Weiguo Li, Young Keun Kim, Dong‐Hyun Kim   +10 more
wiley   +1 more source

Steering Oxygen Activation Pathways via Redox Dual‐Defects in 2D Hydrated WO3 for High‐Yield Singlet Oxygen Evolution

Advanced Functional Materials, EarlyView.
Redox dual‐defects (Cs substitution and O vacancies) in 2D hydrated WO3 steer O2 activation toward selective singlet oxygen evolution. WO‐CO achieves 8.6–15.8 times higher 1O2 production than single‐defect or pristine catalysts, enabling efficient pollutant mineralization via a pathway‐selective photocatalytic mechanism.
Sheng‐Qi Guo, Mingqi Xiao, Fangyuan Zhang, Hui Li, Yuli Jia, Zhenfang Zhang, Liqun Ye, Bo Yang, Tianyi Ma   +8 more
wiley   +1 more source

Effect of Series Resistance and Interface State Density on Electrical Characteristics of Au/SiO2/n-GaN Schottky Diodes [PDF]

Журнал нано- та електронної фізики, 2011
We have investigated the current-voltage (I−V) characteristics of (Au/SiO2/n-GaN) metal-insulator-semiconductor (MIS) Schottky diodes and compared with (Au/n-GaN) metal-semiconductor (MS) Schottky diode. The effect of SiO2 on the surface preparation of n-
M. Siva Pratap Reddy, B. Prasanna Lakshmi, A. Ashok Kumar, V. Rajagopal Reddy   +3 more
doaj  

Mixed‐Metal Promotion in a Manganese‐Molybdenum Oxynitride as Catalyst to Integrate C─C and C─N Coupling Reactions for the Direct Synthesis of Acetonitrile from Syngas and Ammonia

Advanced Materials, EarlyView.
Transition metal oxy/carbo‐nitrides show great promise as catalysts for sustainable processes. A Mn‐Mo mixed‐metal oxynitride attains remarkable performance for the direct synthesis of acetonitrile, an important commodity chemical, via sequential C─N and C─C coupling from syngas (C1) and ammonia (N1) feedstocks.
M. Elena Martínez‐Monje, Wilson Henao, Tania Rodenas, Patricia Concepción, Virginia Pérez Dieste, Alexander Missyul, Giovanni Agostini, Gonzalo Prieto   +7 more
wiley   +1 more source

Current Transport Behaviour of Au/n-GaAs Schottky Diodes Grown on Ge Substrate With Different Epitaxial Layer Thickness Over a Wide Temperature Range [PDF]

Журнал нано- та електронної фізики, 2011
The work presents temperature dependent forward and reverse current-voltage (I-V) analyses of n-GaAs/Au Schottky Diodes grown on n+ Ge substrate with different epitaxial layer thicknesses.
N. Padha, R. Sachdeva, R. Sihotra, S.B. Krupanidhi   +3 more
doaj  

Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2022
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors and dual gated reconfigurable field-effect transistors. The given model calculates the charge-carrier injection
Christian Roemer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamin Iniguez, Alexander Kloes   +8 more
doaj   +1 more source

Polymorph‐Specific Electronic Transduction in WO3 during Molecular Sensing

Advanced Materials, EarlyView.
Metal‐oxide polymorphs with similar surface chemistry can nevertheless exhibit distinct sensing properties. In γ‐ and ε‐WO3, analyte adsorption appears comparable; yet, only ε‐WO3 induces a pronounced lattice electronic perturbation that accommodates charge in sub‐conduction band minimum states.
Matteo D'Andria, Meng Yin, Stefan Neuhauser, Vlasis G. Mavrantzas, Ying Chen, Ken Suzuki, Andreas T. Güntner   +6 more
wiley   +1 more source