Results 31 to 40 of about 9,132 (212)
Temperature-dependent electrical characterizations of high-current-density AlN quasi-vertical Schottky barrier diodes on AlN substrates [PDF]
APL Electronic DevicesHigh-current-density (>1 kA/cm2) quasi-vertical AlN Schottky barrier diodes (SBDs) were fabricated on native AlN substrates by metal–organic chemical vapor deposition.
Bingcheng Da +9 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot [PDF]
Журнал нано- та електронної фізики, 2016 The current-voltage (I-V) characteristics of In/p-Si Schottky barrier contact were measured over the temperature range 230-360 K with interval of 10 K.
J.M. Dhimmar, H.N. Desai, B.P. Modi
doaj +1 more source
Homogenous FACsPbI3 Perovskite Solar Cells Enabled by a Seed‐Facilitated Cation Exchange Strategy
Advanced Functional Materials, EarlyView.A novel seed‐facilitated cation exchange strategy is designed for homogenous FACsPbI3 perovskites using the biomass‐derived solvent γ‐valerolactone. Pre‐deposited 0D Cs4PbI6 seeds induce rapid nucleation and efficient cation exchange, producing a uniform FA–Cs distribution and significantly reducing defect density, enabling high‐performance and stable ...
Meng Ren +10 more
wiley +1 more source
Richardson-Schottky transport mechanism in ZnS nanoparticles
AIP Advances, 2016 We report the synthesis and electrical transport mechanism in ZnS semiconductor nanoparticles. Temperature dependent direct current transport measurements on the compacts of ZnS have been performed to investigate the transport mechanism for temperature ...
Hassan Ali +6 more
doaj +1 more source
AIP Advances, 2021 Deep-level transient spectroscopy (DLTS) using Schottky barrier diodes (SBDs) is widely used for quantitative analysis of deep levels. This study focuses on the dependence of Schottky barrier height on apparent time constants and concentrations of ...
Keito Aoshima, Masahiro Horita, Jun Suda
doaj +1 more source
Advanced Functional Materials, EarlyView.This work demonstrates a scalable, low‐temperature synthesis strategy that combines a thioacetamide (TA)‐based dual sulfur source with CdS chlorination, enabling the formation of high‐quality Sb2S3 with a reduced open‐circuit voltage loss, resulting in improved device efficiency.
Vijay C. Karade +16 more
wiley +1 more source
Nanomaterials, 2018 We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE) a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their
Moonsang Lee +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.In this report, a self‐adaptive anhydrous passivation strategy is introduced by incorporating trimellitic anhydride (TMAH) into the perovskite precursor. In situ hydrolysis of TMAH yields trimellitic acid (TMA); ‐C═O/‐COO− groups of TMAH/TMA form a chelate with undercoordinated Pb2+/Sn2+, regulate nucleation, promote (100) orientation, passivate ...
Md. Ataur Rahman +6 more
wiley +1 more source
Designed Lewis Acid–Base Passivation for High Performance Perovskite Solar Cells
Advanced Functional Materials, EarlyView.ABSTRACT Silicon's high cost and long energy payback time remain major barriers to the global expansion of solar power. In contrast, metal–halide perovskites offer abundant, solution‐processable absorbers, and have achieved efficiencies of 25%–30%, positioning them as strong competitors to silicon.
Afna Manaf +4 more
wiley +1 more source