Results 11 to 20 of about 657,960 (297)
Nature of the Schottky term in the Schottky barrier
Physical Review Letters, 1989 Note: Univ wisconsin,ctr synchrotron radiat,madison,wi 53706. Chang, y, univ wisconsin,dept phys,madison,wi 53706.ISI Document Delivery No.: AV754 Reference LSE-ARTICLE-1989-004 Record created on 2006-10-03, modified on 2017-05 ...
Chang, Y. +4 more
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Interface and Transport Properties of Fe/GaAs(001) Heterostructures [PDF]
, 2012 Fe/GaAs(001) is one of the leading candidate systems for achieving efficient spin-polarised injection. Although there have been numerous studies on the magnetotransport properties of Fe/GaAs(001) systems there is relatively little knowledge of the ...
Fleet, Luke
core +6 more sources
AIP Advances, 2022 Carbon nanotubes (CNTs) are promising materials for gas sensing because of their large specific area and high sensitivity to charge differentiation.
Shota Nakahara +5 more
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High quality Schottky contacts for limiting leakage currents in Ge-based Schottky barrier MOSFETs [PDF]
, 2009 Schottky barrier (SB) Ge channel MOSFETs suffer from high drain-body leakage at the required elevated substrate doping concentrations to suppress source-drain leakage.
Husain, M.K., Li, X., de Groot, C.H.
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Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications
Crystals, 2020 This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on ...
Hung-Jin Teng +5 more
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High-frequency performance of Schottky source/drain silicon pMOS devices [PDF]
, 2008 A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic
Snyder, J. +6 more
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A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio +11 more
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An atomistic view on the Schottky barrier lowering applied to SrTiO3/Pt contacts
AIP Advances, 2019 The interface between a metal and a semiconductor is known as Schottky contact and a key factor in semiconductor technologies. Those interfaces normally build an energetic barrier, which is responsible for the exponential current voltage dependence ...
C. Funck, S. Menzel
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +3 more
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Electrodeposition of Ni-Si Schottky barriers [PDF]
, 2005 Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities.
P.A.J. de Groot +13 more
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