Results 21 to 30 of about 9,132 (212)
Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications
Crystals, 2020 This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on ...
Hung-Jin Teng +5 more
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An atomistic view on the Schottky barrier lowering applied to SrTiO3/Pt contacts
AIP Advances, 2019 The interface between a metal and a semiconductor is known as Schottky contact and a key factor in semiconductor technologies. Those interfaces normally build an energetic barrier, which is responsible for the exponential current voltage dependence ...
C. Funck, S. Menzel
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AIP Advances, 2022 Under the irradiation of a 63Ni source, the Al/diamond Schottky barrier diode and 2198 Al–Li alloy/diamond Schottky barrier diode can convert decay energy into electrical energy.
Yu Wang +7 more
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Nanophotonics, 2021 MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface.
Yang Changming +6 more
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AIP Advances, 2021 It is generally believed that the resistance degradation behavior of bulk and thin-film oxide capacitors arises from the oxygen vacancy migration within the oxide and/or the charge injection at the oxide/electrode interface.
Feng Xue
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Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study [PDF]
Journal of Nanostructures, 2012 A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism.
Z. Ahangari, M. Fathipour
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Nanoscale Research Letters, 2019 We studied the reverse current emission mechanism of the Mo/β-Ga2O3 Schottky barrier diode through the temperature-dependent current-voltage (I-V) characteristics from 298 to 423 K.
Zhuangzhuang Hu +10 more
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IEEE Journal of the Electron Devices SocietyGate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee +3 more
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Investigation of significantly high barrier height in Cu/GaN Schottky diode
AIP Advances, 2016 Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg +4 more
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Thermal Annealing Behaviour on Electrical Properties of Pd/Ru Schottky Contacts on n-Type GaN [PDF]
Журнал нано- та електронної фізики, 2011 We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements.
N. Nanda Kumar Reddy, V. Rajagopal Reddy
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