Results 21 to 30 of about 657,960 (297)
AIP Advances, 2022 Under the irradiation of a 63Ni source, the Al/diamond Schottky barrier diode and 2198 Al–Li alloy/diamond Schottky barrier diode can convert decay energy into electrical energy.
Yu Wang +7 more
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Schottky-Barrier-Free Contacts with Two-Dimensional Semiconductors by Surface-Engineered MXenes [PDF]
, 2016 Two-dimensional (2D) metal carbides and nitrides, called MXenes, have attracted great interest for applications such as energy storage. We demonstrate their potential as Schottky-barrier-free metal contacts to 2D semiconductors, providing a solution to ...
Yuanyue Liu +5 more
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Nanophotonics, 2021 MXene, a new advanced two-dimensional material, has attracted great attention in energy storage, transparent electrodes, and electromagnetic shielding due to its high conductivity, high specific surface area, and hydrophilic surface.
Yang Changming +6 more
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The Electrical Properties of Nanoscale Parallel Semiconductor Interfaces [PDF]
, 2002 Nanosphere lithography has been used to prepare a series of ordered, periodic arrays of low barrier height n-Si/Ni nanometer-scale contacts interspersed amongst high barrier height n-Si/liquid contacts.
Rossi, Robert Charles
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AIP Advances, 2021 It is generally believed that the resistance degradation behavior of bulk and thin-film oxide capacitors arises from the oxygen vacancy migration within the oxide and/or the charge injection at the oxide/electrode interface.
Feng Xue
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A Novel 183GHz Subharmonic Schottky Diode Mixer [PDF]
, 1992 PhDThe technique of microwave . limb sounding -from space represents a very powerful tool for determining the atmospheric processes involved in ozone depletion, the greenhouse effect, acid rain, etc..
Mann, Christopher Mark
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Modulation of barrier height in n-type GaN Schottky structure with ultrathin oxide interlayer mediated by dipole formation [PDF]
APL Electronic DevicesThe effect on the barrier height of inserting ultrathin oxide (GaOx) interlayers at n-type GaN Schottky contacts was systematically investigated. Inserting interlayers (>0.5nm) between GaN and electrode metals having relatively low electronegativities ...
Masahiro Hara +4 more
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Impact of Silicon Wafer Orientation on the Performance of Metal Source/Drain MOSFET in Nanoscale Regime: a Numerical Study [PDF]
Journal of Nanostructures, 2012 A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism.
Z. Ahangari, M. Fathipour
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Image Force Corrections to Tung's Inhomogeneous Schottky Barrier Model
, 2021 The popular Tung model for Schottky barrier inhomogeneity considers how low-barrier patches (embedded in a high barrier background) impact the diode current. However, Tung's model fails to account for the image-force effect.
Dimitrijev, Sima, Nicholls, Jordan R
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IEEE Journal of the Electron Devices SocietyGate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee +3 more
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