Results 111 to 120 of about 47,292 (298)

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Science‐Towards‐Technology Breakthrough in CO2 Electroreduction: Multiphysics, Multiscale, and Artificial Intelligence Insights

Advanced Materials, EarlyView.
Electrochemical CO2RR is a key technology for converting CO2 into chemicals, but there remains a gap between “laboratory science” and “engineering practice” in current research. This review establishes a multi‐scale research framework, encompassing atomic‐level characterization, microenvironment regulation, external field‐assisted optimization, and AI ...
Ping Hong, Changfan Xu, Huaping Zhao, Yong Lei   +3 more
wiley   +1 more source

A Schottky Barrier Device on Steel for use in Photovoltaics [PDF]

, 2016
On bringing a metal and a semiconductor into contact, a diodic interface can be created, the Schottky barrier. Photovoltaic devices based on the sensitization of a Schottky barrier have been reported.
Crook, R, Ryall, N, Weinstein, JA
core  

Single‐Atom Photocatalyst as Floatable Artificial Leaf for Upcycling Oceanic Plastic Waste

Advanced Materials, EarlyView.
To resolve the catastrophic disaster of oceanic plastic pollution, the novel Ru single atom loaded ZnIn2S4 photocatalysts, in the forms of powder or floatable artificial leaf, were prepared for direct conversion of raw polypropylene plastic into valuable chemicals. The optimized catalyst exhibits exceptional performance, with a total formic/acetic acid
Amin Talebian‐Kiakalaieh, Xin Xu, Wenzhong Ji, Yun Liu, Bingquan Xia, Jingrun Ran, Shi‐Zhang Qiao   +6 more
wiley   +1 more source

The analysis of carrier transport mechanism at the interface of BZOPET-GR Schottky contact

Materials Research Express
Through the hydrothermal technique, we successfully deposited boron (B)-doped zinc oxide nanorods (ZnO NRs) onto a polyethylene terephthalate (PET)/graphene (GR) flexible substrate, creating a B-ZnO/PET/GR Schottky contact.
Jianhua Zhang, Yapeng Li, Jiqiang Jia, Zhaoyu Luo   +3 more
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Reducing the Barrier Height in Organic Transistors

Advanced Electronic Materials
Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors.
Arash Ghobadi, Cherian J. Mathai, Jacob Cook, Guang Bian, Salahuddin Attar, Mohammed Al‐Hashimi, Shubhra Gangopadhyay, Suchismita Guha   +7 more
doaj   +1 more source

High voltage, high current Schottky barrier solar cell [PDF]

, 1977
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier.
Stirn, R. J.
core   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

A 2.8 kV Breakdown Voltage α-Ga₂O₃ MOSFET with Hybrid Schottky Drain Contact

Micromachines
Among various polymorphic phases of gallium oxide (Ga2O3), α-phase Ga2O3 has clear advantages such as its heteroepitaxial growth as well as wide bandgap, which is promising for use in power devices.
Seung Yoon Oh, Yeong Je Jeong, Inho Kang, Ji-Hyeon Park, Min Jae Yeom, Dae-Woo Jeon, Geonwook Yoo   +6 more
doaj   +1 more source