Results 231 to 240 of about 47,292 (298)

The ESD Robustness and Protection Technology of P-GaN HEMT. [PDF]

Micromachines (Basel)
Shi Y, Chen Y, He L, Chen X, Chen Y, Lu G.   +5 more
europepmc   +1 more source

Investigation of Electrical Behavior of Au/Ti/AlN/Si Schottky Diode via Gaussian Distribution Barrier Modeling. [PDF]

ACS Omega
Karaca A, Yıldız DE, Tataroğlu A.
europepmc   +1 more source

Copper Oxide-Based Schottky Diode Using Poly(3-hexylthiophene) as an Interlayer. [PDF]

ACS Omega
Patel VD, Mohanty A, Roy A, Gupta D.
europepmc   +1 more source

Enhancing the photoresponse performance of graphene on silicon-based heterojunction as a broadband photodetector. [PDF]

Sci Rep
Bonavolontà C, Vettoliere A, Ruggiero B, Silvestrini P, Valentino M.   +4 more
europepmc   +1 more source

Mitigating Plasma Etch-Induced Negative Charge Trapping in 2.7 kV β‑Ga₂O₃ (001) Trench Schottky Barrier Diodes Using H₃PO₄ Treatment. [PDF]

ACS Appl Electron Mater
Kim MY, Bhat AK, Vanjari SC, Smith MD, Kuball M.   +4 more
europepmc   +1 more source

Negative Schottky Barriers and Spin-Polarized Fermi Crossings at WSe₂/NbSe₂ Interfaces. [PDF]

ACS Nano
Clark OJ, Azhar A, Vu TH, Chambers BA, Mazzola F, Sridhar S, Balakrishnan G, Bostwick A, Jozwiak C, Rotenberg E, Harmer SL, Bahramy MS, Fuhrer MS, Edmonds MT.   +13 more
europepmc   +1 more source

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Schottky‐Contacted Nanowire Sensors

Advanced Materials, 2020
AbstractThe progress of the Internet‐of‐Things in the past few years has necessitated the support of high‐performance sensors. Schottky‐contacted nanowire sensors have attracted considerable attention owing to their high sensitivity and fast response time.
Jianping Meng, Zhou Li
openaire   +4 more sources

Schottky contacts to InP

physica status solidi (c), 2005
We report an experimental investigation of Au Schottky contacts prepared on both n-type and p-type InP. In particular, we have investigated in great details the effects of InP surface treatment on the current-voltage behaviour of n-type junctions. This included cleaning with HF:H2O and HCl:H2O solutions before metallization, investigatinging the effect
Rakovics, V., Pödör, B., AYYILDIZ, Enise, Horvath, Zs. J., Çetin, Hidayet   +4 more
openaire   +2 more sources