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Schottky‐Contacted Nanowire Sensors
Advanced Materials, 2020AbstractThe progress of the Internet‐of‐Things in the past few years has necessitated the support of high‐performance sensors. Schottky‐contacted nanowire sensors have attracted considerable attention owing to their high sensitivity and fast response time.
Jianping Meng, Zhou Li
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Polymer–Metal Schottky Contact with Direct‐Current Outputs
Advanced Materials, 2016 Polymer-Metal Schottky Contact with Direct-Current ...
Hao Shao, Hongxia Wang, Liming Dai
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physica status solidi (c), 2005
We report an experimental investigation of Au Schottky contacts prepared on both n-type and p-type InP. In particular, we have investigated in great details the effects of InP surface treatment on the current-voltage behaviour of n-type junctions. This included cleaning with HF:H2O and HCl:H2O solutions before metallization, investigatinging the effect
Rakovics, V. +4 more
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We report an experimental investigation of Au Schottky contacts prepared on both n-type and p-type InP. In particular, we have investigated in great details the effects of InP surface treatment on the current-voltage behaviour of n-type junctions. This included cleaning with HF:H2O and HCl:H2O solutions before metallization, investigatinging the effect
Rakovics, V. +4 more
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Schottky contacts on annealed GaAs
Thin Solid Films, 1982Unimplanted n-type GaAs epitaxial layers have been annealed under the same conditions as those required to activate ion implants. If the duration of the anneal is sufficiently long (e.g. 10 min at 800°C) acceptor ions accumulate at the surface with a concentration of about 2×1022 m−3.
R. E. Miles +3 more
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Photovoltage at the Metal-CdS Schottky Contact
Physica Status Solidi (a), 1978Photovoltages at a metal—CdS Schottky contact occur at photon energies that are smaller than the CdS band gap. They may be due either to photoemission of electrons from the metal into the CdS or to hole generation in the CdS. The first mechanism is shown to occur in conducting CdS.
R. Butendeich, W. Ruppel
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Schottky Barrier on W-GaAs Contact
Physica Status Solidi (a), 1978Tungsten is deposited on GaAs by WCl6 reaction with H2. The GaAs substrate is heated to 400 °C during the deposition. The forward current of W-n-GaAs structures prepared in such way increases exponentially over five decades in accordance with the theory of the thermionic electron emission from the semiconductor to the metal. The Schottky barrier height
P. M. Batev +3 more
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Ohmic and Schottky contacts to GaSb
Vacuum, 1991The ohmic contact properties of Ag/AuGeNi/n-GaSb and AuGeNi/n-GaSb systems were investigated in this paper by measuring the barrier height and specific contact resistance with various sintering temperatures. The lowest specific contact resistance was about 8 X 10-3 - 8 X 10-4 cm2 for the Ag/AuGeNi/n-GaSb contact system when the sintering temperature ...
TS Wu, YK Su, FS Juang, NY Li, KJ Gan
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1994
Experiments on rectifying contacts started in 1874 with the pioneering work of Braun who observed asymmetries in transport of electrical current across metal/semiconductor interfaces [3.1]. The following decades brought out a variety of technical applications, but it took more than sixty years until Schottky [3.2] and, independently, Mott [3.3] gave ...
Jürgen H. Werner, Uwe Rau
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Experiments on rectifying contacts started in 1874 with the pioneering work of Braun who observed asymmetries in transport of electrical current across metal/semiconductor interfaces [3.1]. The following decades brought out a variety of technical applications, but it took more than sixty years until Schottky [3.2] and, independently, Mott [3.3] gave ...
Jürgen H. Werner, Uwe Rau
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Barrier inhomogeneities at Schottky contacts
Journal of Applied Physics, 1991We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also
Jürgen H. Werner, Herbert H. Güttler
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Reliability of Schottky Contacts on AlGaN
physica status solidi (a), 2001We compare the performance of Pt- and Ni-based Schottky contacts on Al x Ga 1-x N (x = 0, 0.31). Pt/Au contacts on GaN present lower leakage currents than Ni/Au, although they degrade at temperatures as low as 300 °C due to Pt-Au inter-diffusion. An intermediate thin Ti layer is shown to enhance thermal stability and Schottky barrier height.
E. Monroy +10 more
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