Results 271 to 280 of about 14,138 (303)
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Theory of Schottky-Contact Formation on GaAs (110)
MRS Proceedings, 1991ABSTRACTA phenomenological theory of Schottky contact formation to GaAs (110) surfaces at room temperature is discussed. The theory splits into two regimes, low- and high-metal coverages. In the low-coverage regime the movement of the Fermi level is proposed to occur because of universal derelaxation of the GaAs (110) surface.
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Refractory Silicide Schottky Contacts To Gaas
MRS Proceedings, 1985ABSTRACTRefractory suicides form high temperature stable Schottky contacts to GaAs. This finding enabled us to develop self-aligned GaAs MESFETs, thereby enabling the development of today's GaAs ICs. This paper reviews electrical and metallurgical studies on refractory-metal/GaAs and refractory-metal-si licide/GaAs interfaces.
N. Yokoyama +3 more
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Metal-n-ZnSiP2 Schottky Contacts
Physica Status Solidi (a), 1978Schottky contacts are produced on n-type ZnSiP2 crystals by means of electroless deposition of Ni or Au as well as by vacuum evaporation of Au. The barrier heights are determined by photoemission and C–U measurements. The analysis of the I–U characteristic and its temperature dependence yields information about the dominat current mechanisms.
G. Kühnel, W. Siegel, E. Ziegler
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Schottky-contact plasmonic rectenna for biosensing
SPIE Proceedings, 2013We propose a plasmonic gold nanodipole array on silicon, forming a Schottky contact thereon, and covered by water. The behavior of this array under normal excitation has been extensively investigated. Trends have been found and confirmed by identification of the mode propagating in nanodipoles and its properties.
Mohammad Alavirad +3 more
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Laterally Inhomogeneous Schottky Contacts
2004The evaluation of current—voltage curves characterizes each individual Schottky contact by an effective barrier height and an ideality factor. The ideality factors n are generally larger than n if ,the value determined by the image-force effect only.
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Schottky Contacts Formed on Phosphidized InGaAs
MRS Proceedings, 1993ABSTRACTThe surface of InGaAs (In 53 %) lattice-matched to InP has been phosphidized using phosphine plasma. X-ray photoelectron spectroscopy analysis indicates that substitution of phosphorus for arsenic and deposition of phosphorus layer occur due to phosphidization.
Takashi Sugino +4 more
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Tantalum silicide Schottky contacts to GaAs
Journal of Applied Physics, 1989Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy.
C. P. Lee +3 more
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On-Device Pressure-Tunable Moving Schottky Contacts
Nano LettersContact engineering enhances electronic device performance and functions but often involves costly, inconvenient fabrication and material replacement processes. We develop an in situ, reversible, full-device-scale approach to reconfigurable 2D van der Waals contacts.
Zhaokuan Yu +6 more
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Alkali Adatom-amplified Schottky contact and built-in voltage for stable Zn-metal anodes
Energy Storage Materials, 2023Ryanda Enggar Anugrah Ardhi +2 more
exaly