Results 261 to 270 of about 14,138 (303)
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Origin of the Excess Capacitance at Intimate Schottky Contacts
Physical Review Letters, 1988We identify the physical origin of the excess capacitance at Schottky diodes without an interfacial layer, i.e., intimate Schottky contacts. Measured capacitance in excess of the space-charge capacitance is shown to be caused by the injection of minority carriers into the bulk semiconductor, rather than by the presence of interface states, as ...
, Werner +4 more
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Minority carrier effects in nanoscale Schottky contacts
Nanotechnology, 2009We report the current-voltage behavior for nanoscale point contacts to Si(111) obtained in ultrahigh vacuum using scanning tunneling microscopy. Epitaxial CoSi(2) islands provide single-crystal contacts with well-defined size and shape. The zero bias conductance is found to be independent of the island size (10(2)-10(4) nm(2)) and shape, but varies ...
Lifeng, Hao, P A, Bennett
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Study of GaSb Schottky contacts
SPIE Proceedings, 1994Various metals were evaporated on the n-GaSb epilayer grown by low pressure metal organic chemical vapor deposition (MOCVD) to form the Schottky contact. The barrier height is almost independent of the work function and is determined entirely by the doping and surface property of the semiconductor. These results are in good agreement with Bardeen model.
Yan-Kuin Su +3 more
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Tunable Schottky barrier contacts to InxGa1−xAs
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000Al/In x Ga 1−x As (001) diodes incorporating Si bilayers deposited under As or Al flux were fabricated by molecular-beam epitaxy on GaAs(001) wafers for 0.2<x<0.4. Schottky barrier heights as high as 0.75 eV and as low as −0.10 eV could be reproducibly obtained.
C Marinelli +10 more
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Schottky and ohmic contacts to SiC
2002This chapter covers Schottky (rectifying barrier) and ohmic (nonrectifying, no barrier) contacts to SiC. There are a few devices such as the MESFET and the Schottky diode that actually need Schottky contacts. However, for most devices ohmic contacts are preferred between a metal and semiconductor.
C.-M. Zetterling, S.-K. Lee, M. Östling
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Schottky contacts on a highly doped organic semiconductor
Physical Review B, 1995Schottky-diode action in thiophene oligomer is investigated by current-density--voltage (J-V) and capacitance-voltage (C-V) measurements. An energy-band diagram is deduced that explains the diode characteristics for both unintentionally and highly doped thiophene oligomers.
, Lous, , Blom, , Molenkamp, , Leeuw
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On the present understanding of Schottky contacts
1986In 1874 F. Braun observed that “bei einer grosen Anzahl naturlicher und kunstlicher Schwefelmetalle … der Widerstand derselben verschieden war mit Richtung, Intensitat und Dauer des Stromes”. W. Schottky then, in 1938, explained the rectifying behaviour of such metal-semiconductor contacts by a depletion layer which is characterized by the ...
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Scaling effects in Schottky contacts
Journal of Applied Physics, 2015This article reports on scaling effects in Schottky contacts on various types of semiconductors, including low resistivity, semi-intrinsic, and deep-level compensated. The investigation was performed using a finite element computation and drift-diffusion transport model. In low resistivity semiconductors, the currents scale with contact area as long as
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Issues of contact etching and pre-treatment in Schottky contact
Thin Solid Films, 2009Abstract This paper reports on the process dependence of contact resistance of silicide/n+ Si and silicide/p+ Si contact. Three processes such as contact etching, Si treatment and pre-treatment are investigated with contact resistance point of view.
Haksun Lee +6 more
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Schottky Contacts Electrical Parameters Modelling
2006 1st Electronic Systemintegration Technology Conference, 2006The main purpose of the work is modelling and determination of electrical parameters of Schottky contacts using their Voltage-Current Characteristics. In this case a model of a uniform is normally used within a forward bias values less than 10 V. For non-uniform metal-semiconductor contacts we have proposed and used the more complicated method of ...
Valentine Baranov +2 more
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