Results 251 to 260 of about 47,292 (298)
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Tunable Schottky barrier contacts to InxGa1−xAs
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000Al/In x Ga 1−x As (001) diodes incorporating Si bilayers deposited under As or Al flux were fabricated by molecular-beam epitaxy on GaAs(001) wafers for 0.2<x<0.4. Schottky barrier heights as high as 0.75 eV and as low as −0.10 eV could be reproducibly obtained.
C Marinelli +10 more
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Photovoltage at the Metal-CdS Schottky Contact
Physica Status Solidi (a), 1978Photovoltages at a metal—CdS Schottky contact occur at photon energies that are smaller than the CdS band gap. They may be due either to photoemission of electrons from the metal into the CdS or to hole generation in the CdS. The first mechanism is shown to occur in conducting CdS.
R. Butendeich, W. Ruppel
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Minority carrier effects in nanoscale Schottky contacts
Nanotechnology, 2009We report the current-voltage behavior for nanoscale point contacts to Si(111) obtained in ultrahigh vacuum using scanning tunneling microscopy. Epitaxial CoSi(2) islands provide single-crystal contacts with well-defined size and shape. The zero bias conductance is found to be independent of the island size (10(2)-10(4) nm(2)) and shape, but varies ...
Lifeng, Hao, P A, Bennett
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Study of GaSb Schottky contacts
SPIE Proceedings, 1994Various metals were evaporated on the n-GaSb epilayer grown by low pressure metal organic chemical vapor deposition (MOCVD) to form the Schottky contact. The barrier height is almost independent of the work function and is determined entirely by the doping and surface property of the semiconductor. These results are in good agreement with Bardeen model.
Yan-Kuin Su +3 more
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Schottky barrier contact-based RF MEMS switch
2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS), 2007This paper presents the design, fabrication, and measurement results for a novel Schottky barrier contact-based radio frequency (RF) microelectromechanical systems (MEMS) switch. This Schottky barrier contact allows one not only to operate the RF MEMS switch in a traditional capacitive mode when it is reverse biased but also conduct current in a ...
Brandon Pillans +4 more
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Scaling effects in Schottky contacts
Journal of Applied Physics, 2015This article reports on scaling effects in Schottky contacts on various types of semiconductors, including low resistivity, semi-intrinsic, and deep-level compensated. The investigation was performed using a finite element computation and drift-diffusion transport model. In low resistivity semiconductors, the currents scale with contact area as long as
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Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)
ECS Transactions, 2013We have proposed and fabricated high performance of AlGaN/GaN Schottky Barrier Diodes (SBDs) with various Schottky contact. The breakdown voltage of proposed SBDs with the TaN and ITO Schottky contact deposited by RF sputtering method was increased compared to the widely used Ni/Au Schottky contact.
Woojin Ahn +4 more
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Laterally Inhomogeneous Schottky Contacts
2004The evaluation of current—voltage curves characterizes each individual Schottky contact by an effective barrier height and an ideality factor. The ideality factors n are generally larger than n if ,the value determined by the image-force effect only.
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Refractory Silicide Schottky Contacts To Gaas
MRS Proceedings, 1985ABSTRACTRefractory suicides form high temperature stable Schottky contacts to GaAs. This finding enabled us to develop self-aligned GaAs MESFETs, thereby enabling the development of today's GaAs ICs. This paper reviews electrical and metallurgical studies on refractory-metal/GaAs and refractory-metal-si licide/GaAs interfaces.
N. Yokoyama +3 more
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Tantalum silicide Schottky contacts to GaAs
Journal of Applied Physics, 1989Tantalum silicide (TaSix ) films with different Si to Ta ratios (x) as Schottky contacts to GaAs have been studied. The films were prepared by coevaporation. The metallurgical properties of the film and the stability of the silicide-GaAs interface were studied by x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy.
C. P. Lee +3 more
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