Results 261 to 270 of about 47,292 (298)

Schottky Contacts Formed on Phosphidized InGaAs

MRS Proceedings, 1993
ABSTRACTThe surface of InGaAs (In 53 %) lattice-matched to InP has been phosphidized using phosphine plasma. X-ray photoelectron spectroscopy analysis indicates that substitution of phosphorus for arsenic and deposition of phosphorus layer occur due to phosphidization.
Takashi Sugino, Yoshifumi Sakamoto, Hideaki Ninomiya, Koichiro Matsuda, Junji Shirafuji   +4 more
openaire   +1 more source

Schottky Contact RF MEMS Switch Characterization

2007 IEEE/MTT-S International Microwave Symposium, 2007
This paper presents measured results for a novel Schottky barrier contact-based RF MEMS switch, specifically S-parameter and IP2 linearity measurements. The Schottky barrier contact allows one to operate the RF MEMS switch in a traditional capacitive mode when it is reverse biased, but can also conduct current in a forward biased state to discharge ...
Brandon Pillans, Frank Morris, Prem Chahal, Gary Frazier, Jeong-Bong Lee   +4 more
openaire   +1 more source

Al Schottky contact on p-GaSe

Superlattices and Microstructures, 2006
A new Schottky diode, Al/p-GaSe, was presented in this study. It shows an effective barrier height of 0.96 eV with an ideality factor of 1.24 over five decades and a reverse leakage current density of 4.12◊10 7 A/cm 2 at 2 V after rapid thermal annealing at 400 C for 30 s.
Wen-Chang Huang, Shui-Hsiang Su, Yu-Kuei Hsu, Chih-Chia Wang, Chen-Shiung Chang   +4 more
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Schottky contacts to hydrogen doped ZnO

physica status solidi (a), 2008
AbstractHigh resistivity (≥1 kΩ cm) hydrothermally grown single crystal ZnO wafers were modified by hydrogen implantation. The implantation has been performed with multiple energies in order to form a box‐like profile with a depth of 4 μm and two different concentrations of 8 × 1017 H/cm3 and 1.5 × 1018 H/ cm3.
R. Schifano, E. V. Monakhov, J. S. Christensen, A. Yu. Kuznetsov, B. G. Svensson   +4 more
openaire   +1 more source

Schottky-contact plasmonic rectenna for biosensing

SPIE Proceedings, 2013
We propose a plasmonic gold nanodipole array on silicon, forming a Schottky contact thereon, and covered by water. The behavior of this array under normal excitation has been extensively investigated. Trends have been found and confirmed by identification of the mode propagating in nanodipoles and its properties.
Mohammad Alavirad, Saba Siadat Mousavi, Langis Roy, Pierre Berini   +3 more
openaire   +1 more source

Vertical GaN Schottky barrier diodes with micrometer pillar Schottky contacts

Journal of Physics D: Applied Physics
Abstract We present a novel design of gallium nitride (GaN) Schottky barrier diodes (SBDs) with a vertical micropillar structure. The micron-scale electrode design can effectively enhance the on-state current density and reduce the specific on-resistance (R on,Sp).
Renqiang Zhu, Bo Li, Shuai Li, Zhengweng Ma, Huakai Yang, Shijie He, Shuangwu Huang, Xinbo Xiong, Hsien-Chin Chiu, Xiaohua Li, Bo Zhang, Xinke Liu   +11 more
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Photoemission electron microscopy of Schottky contacts

Surface Science, 1998
Abstract We demonstrate a new application of photoemission electron microscopy (PEEM) for the investigation of Schottky contacts. As an example we have investigated the changes in contrast in PEEM images when silver is deposited on a lateral p-n diode structure on a Si(100) surface.
Margret Giesen, Raymond J. Phaneuf, Ellen D. Williams, Theodore L. Einstein   +3 more
openaire   +1 more source

On-Device Pressure-Tunable Moving Schottky Contacts

Nano Letters
Contact engineering enhances electronic device performance and functions but often involves costly, inconvenient fabrication and material replacement processes. We develop an in situ, reversible, full-device-scale approach to reconfigurable 2D van der Waals contacts.
Zhaokuan Yu, Xuanyu Huang, Jinbo Bian, Yuqing He, Xin Lu, Quanshui Zheng, Zhiping Xu   +6 more
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Schottky contact-based strain-gauge elements

Proceedings of the 1992 International Conference on Industrial Electronics, Control, Instrumentation, and Automation, 2003
The author presents the results of investigations of Schottky contact-based silicon strain-gauge elements. The sensitivity of the strain gauge elements to deformation and temperature is shown to be essentially connected with the degree of imperfection of the silicon layer near the surface.
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Theory of Schottky-Contact Formation on GaAs (110)

MRS Proceedings, 1991
ABSTRACTA phenomenological theory of Schottky contact formation to GaAs (110) surfaces at room temperature is discussed. The theory splits into two regimes, low- and high-metal coverages. In the low-coverage regime the movement of the Fermi level is proposed to occur because of universal derelaxation of the GaAs (110) surface.
openaire   +2 more sources