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On the present understanding of Schottky contacts

1986
In 1874 F. Braun observed that “bei einer grosen Anzahl naturlicher und kunstlicher Schwefelmetalle … der Widerstand derselben verschieden war mit Richtung, Intensitat und Dauer des Stromes”. W. Schottky then, in 1938, explained the rectifying behaviour of such metal-semiconductor contacts by a depletion layer which is characterized by the ...
openaire   +1 more source

Design of the Synergistic Rectifying Interfaces in Mott–Schottky Catalysts

Chemical Reviews, 2023
Xu Dong, Jie-Sheng Chen, Xin-Hao Li
exaly  

AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact

Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 2012
O. Seok, W. Ahn, Y. Kim, M. Ha, M. Han
openaire   +1 more source

Rhodium Germanide Schottky Barrier Contacts

ECS Journal of Solid State Science and Technology, 2015
B. Lutzer   +9 more
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Recent advances in Schottky barrier concepts

Materials Science and Engineering Reports, 2001
Raymond T Tung
exaly  

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