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On the present understanding of Schottky contacts
1986In 1874 F. Braun observed that “bei einer grosen Anzahl naturlicher und kunstlicher Schwefelmetalle … der Widerstand derselben verschieden war mit Richtung, Intensitat und Dauer des Stromes”. W. Schottky then, in 1938, explained the rectifying behaviour of such metal-semiconductor contacts by a depletion layer which is characterized by the ...
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Design of the Synergistic Rectifying Interfaces in Mott–Schottky Catalysts
Chemical Reviews, 2023Xu Dong, Jie-Sheng Chen, Xin-Hao Li
exaly
AlGaN/GaN Schottky Barrier Diodes Employing TaN Schottky Contact
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials, 2012O. Seok, W. Ahn, Y. Kim, M. Ha, M. Han
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Rhodium Germanide Schottky Barrier Contacts
ECS Journal of Solid State Science and Technology, 2015B. Lutzer +9 more
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Manufacture of Al-Si Schottky contacts for Schottky FET
Microelectronics Reliability, 1974openaire +1 more source
Recent advances in Schottky barrier concepts
Materials Science and Engineering Reports, 2001Raymond T Tung
exaly

