Results 91 to 100 of about 42,398 (302)

Modulating Persistent Photoconductivity through Barrier Engineering for High‐performance and Multifunctional Two‐dimensional Optoelectronic Devices

Advanced Science, EarlyView.
Schottky barrier engineering using van der Waals contacts enables effective modulation of persistent photoconductivity (PPC) in optoelectronic devices. A high persistent photoconductivity gain (PPCG) (307.6%) is achieved in a high‐barrier Au/MoS2 junction, supporting photomemory and optoelectronic synaptic behaviors. A low PPCG (4.72%) is achieved in a
Panpan Huo, Xinhao Zhang, Xiangyong Cui, Yeming Wang, Dong Zhou, Baoyuan Man, Il Jeon, Won Jong Yoo, Cheng Yang   +8 more
wiley   +1 more source

Trap-Assisted Tunneling in the Schottky Barrier [PDF]

, 2013
The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling.
Benko, P., Breza, J., Grmanova, A., Harmatha, L., Mikolasek, M., Pechacek, J., Racko, J.   +6 more
core   +1 more source

Robust and Tailored 1D/3D Heterojunction for Efficient and Stable Perovskite Solar Cells

Advanced Science, EarlyView.
This study successfully established a robust 1D/3D heterojunction, characterized by a stable 1D phase, favorable lattice matching, strong interface binding, and effective defect passivation. The resulting epitaxial perovskite film demonstrates preferential vertical orientation of (100) facets, thereby facilitating carriers’ transport and stress relief.
Wending Hao, Tao Liu, Xu Wang, Luan Li, Ziyu Zhang, Fengqi Sun, Qiang Luo, Ning Wang   +7 more
wiley   +1 more source

Influence of the gate edge on the reverse leakage current of AlGaN/GaN HEMTs

AIP Advances, 2015
By comparing the Schottky diodes of different area and perimeter, reverse gate leakage current of AlGaN/GaN high mobility transistors (HEMT) at gate bias beyond threshold voltage is studied.
YongHe Chen, XiaoHua Ma, WeiWei Chen, Bin Hou, JinCheng Zhang, Yue Hao   +5 more
doaj   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications [PDF]

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications.
Bhapkar, Udayan V., Li, Yongjun, Mattauch, Robert J.   +2 more
core   +1 more source

Ultraviolet Photodetectors Based on 4H‐SiC With Honeycomb‐Like Light‐Trapping Structures

Advanced Science, EarlyView.
A facile photoelectrochemical etching method creates honeycomb‐like light‐trapping microstructures on SiC. These microstructures suppress UV reflection and enhance absorption by extending the optical path and facilitating multiple internal reflections, while strengthening the local electric field.
Huifan Xiong, Xiliang Luo, Qunsi Yang, Yibo Hu, Jieshi Chen, Lihui Song, Deren Yang, Xiaodong Pi   +7 more
wiley   +1 more source

Very Low Power Cockcroft-Walton Voltage Multiplier for RF Energy Harvesting Applications [PDF]

, 2019
A device was required that could harvest the electromagnetic energy present in ambient radio frequency (RF) signals. A part of this device must convert the AC RF signal received by the antenna into a DC signal that can be used in an embedded application.
Langdon, Trace
core   +2 more sources

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Diffusion‐Driven Targeted Passivation of Selenium Vacancies via an I‐Doped CdS Buffer Layer for Efficient Sb2Se3 Solar Cells

Advanced Science, EarlyView.
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen, Deyang Qin, Er Nie, Jiahua Tao, Hidefumi Akiyama, Junhao Chu, Shaoqiang Chen   +6 more
wiley   +1 more source