Results 101 to 110 of about 42,398 (302)

Investigation of significantly high barrier height in Cu/GaN Schottky diode

AIP Advances, 2016
Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films.
Manjari Garg, Ashutosh Kumar, S. Nagarajan, M. Sopanen, R. Singh   +4 more
doaj   +1 more source

Compositional dependence of Schottky barrier heights for Au on chemically etched In_(x)Ga_(1-x)P surfaces [PDF]

, 1980
Measurements of the Au Schottky barrier height were carried out on thin films of n‐In_(x)Ga_(1−x)P, of various compositions epitaxially grown on n‐GaAs substrates. Conventional C–V, I–V, and photo response techniques were used. The junction was formed by
Kuech, T. F., McGaldin, J. O.
core  

Ag Nanowire‐Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer

Advanced Electronic Materials, Volume 11, Issue 6, May 2025.
A versatile strategy is reported for fabricating multi‐dimensional heterojunctions with significantly improved charge transfer capability. By integrating Ag nanowires with a MoS2/ZnO heterojunction, a fourfold increase in surface photovoltage is achieved, reaching 200 mV under visible light illumination.
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong‐Wook Kim   +8 more
wiley   +1 more source

Stabilizing Schottky junction in conjugated polymer diodes enables long-term reliable radio-frequency energy harvesting on plastic

npj Flexible Electronics
Due to their inherent flexibility, solution-processable conjugated polymers are increasingly being considered for the cost-effective production of thin-film semiconductor devices used in Internet of Everything (IoE) applications.
Yongwoo Lee, Boseok Kang, Sungjune Jung, Jimin Kwon   +3 more
doaj   +1 more source

Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

AIP Advances, 2016
Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/
Jotinder Kaur, Vinay Sharma, Vipul Sharma, V. Veerakumar, Bijoy K. Kuanr   +4 more
doaj   +1 more source

A Fully Tunable Single-Walled Carbon Nanotube Diode

, 2010
We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube (SWNT). The diode's turn-on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is ~6 times the ...
Appenzeller J., Appenzeller J., Appenzeller J., Avouris P., Avouris P., Boettcher S. W., Bosnick K., Chang-Hua Liu, Chau R., Chen J., Chung-Chiang Wu, Dresselhaus M. D., Gabor N. M., Heinze S., Jena D., Knoch J., Lee J. U., Lee J. U., Lee J. U., Leonard F., Lonergan M. C., Mueller T., Park S. Y., Schulman J. N., Sze S. M., Wu C. C., Zhaohui Zhong, Zhou Y. X.   +27 more
core   +1 more source

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

Advanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis, Anastasia Soultati, Leonidas C. Palilis, Ermioni Polydorou, Konstantinos Davazoglou, Petros‐Panagis Filippatos, Goutham Raj Perumallapelli, Ravindra Naik Bukke, Abd. Rashid bin Mohd Yusoff, Ilhwan Ryu, Peng Gao, Alexander Chroneos, Mohammad Khaja Nazeeruddin, Maria Vasilopoulou   +13 more
wiley   +1 more source

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

, 2011
We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer ...
C. B. Eom, C. M. Folkman, D. Lee, J. F. Scott, J.-G. Yoon, K.-C. Kao, M. E. Lines, S. H. Baek, S. M. Sze, T. H. Kim, T. W. Noh   +10 more
core   +1 more source

THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE [PDF]

, 2001
Hongwei Li, Taihong Wang, 中国科学院物理研究所,北京100080   +2 more
openalex   +1 more source

Diamond Schottky p-i-n diodes for high power RF receiver protectors

, 2021
Vishal Jha, Harshad Surdi, Mohammad Faizan Ahmad, Franz A. Koeck, R. J. Nemanich, Stephen M. Goodnick, T. J. Thornton   +6 more
openalex   +1 more source