Results 31 to 40 of about 42,398 (302)
Scaling of nano-Schottky-diodes
A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional ...
Klapwijk, T. M. +2 more
core +2 more sources
Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee +3 more
doaj +1 more source
Transparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates.
Jamal Aziz +8 more
doaj +1 more source
Low power hydrogen gas sensors using electrodeposited PdNi-Si Schottky diodes
The use of electrodeposited PdNi-Si Schottky barriers as low power Hydrogen sensors is investigated. The Palladium content of the film causes the Hydrogen molecules to dissociate and be absorbed by the film, changing the metal work function and Schottky ...
Boulart, Cédric +4 more
core +1 more source
AlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were analyzed.
Houqiang Fu +4 more
doaj +1 more source
Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes [PDF]
Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range ...
A. Sciuto +28 more
core +1 more source
A 100-element planar Schottky diode grid mixer [PDF]
The authors present a Schottky diode grid mixer suitable for mixing or detecting quasi-optical signals. The mixer is a planar bow-tie grid structure periodically loaded with diodes.
De Lisio, Michael P. +4 more
core +1 more source
GaN Nanowire Schottky Barrier Diodes
A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) structures and the principle of dielectric REduced SURface Field (RESURF) is proposed in this paper. High-threading dislocation density in GaN epitaxy grown on foreign substrates has hindered the development and commercialization of vertical GaN power devices.
Gourab Sabui +7 more
openaire +4 more sources
Impact of Annealing on CuInSe2 Thin Films and Its Schottky Interface [PDF]
The room temperature current–voltage (I-V) characteristics of the Al/p-CuInSe2 Schottky Diodes fabricated on thermally evaporated CIS thin films, before and after annealing, were studied. Prior to their diode formation, the undertaken CIS thin films were
U. Parihar +5 more
doaj
Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy [PDF]
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods.
A. Arehart +7 more
core +3 more sources

