Results 31 to 40 of about 42,398 (302)

Scaling of nano-Schottky-diodes

open access: yes, 2002
A generally applicable model is presented to describe the potential barrier shape in ultra small Schottky diodes. It is shown that for diodes smaller than a characteristic length $l_c$ (associated with the semiconductor doping level) the conventional ...
Klapwijk, T. M.   +2 more
core   +2 more sources

Electrically Tunable Ideality Factor and Series Resistance of Gate-Controlled Graphene/Pentacene Schottky Junctions

open access: yesIEEE Journal of the Electron Devices Society
Gate-tunable Schottky barrier diodes find many applications in logic transistors, photodiodes, and sensors. In this work, the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in ...
Tae Yoon Lee   +3 more
doaj   +1 more source

Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications

open access: yesAdvanced Electronic Materials, 2022
Transparent and flexible diodes could be useful for future transparent electronics. Here such diodes are discussed with electrical breakdown (EBR) comprises of W/ZnO/ITO structure on the polyethylene terephthalate substrates.
Jamal Aziz   +8 more
doaj   +1 more source

Low power hydrogen gas sensors using electrodeposited PdNi-Si Schottky diodes

open access: yes, 2012
The use of electrodeposited PdNi-Si Schottky barriers as low power Hydrogen sensors is investigated. The Palladium content of the film causes the Hydrogen molecules to dissociate and be absorbed by the film, changing the metal work function and Schottky ...
Boulart, Cédric   +4 more
core   +1 more source

Fabrication and Characterization of Ultra-wide Bandgap AlN-Based Schottky Diodes on Sapphire by MOCVD

open access: yesIEEE Journal of the Electron Devices Society, 2017
AlN Schottky diodes with various device geometries were fabricated on sapphire substrate and their temperature-dependent current-voltage characteristics were analyzed.
Houqiang Fu   +4 more
doaj   +1 more source

Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes [PDF]

open access: yes, 2015
Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements as a function of applied voltage over the temperature range ...
A. Sciuto   +28 more
core   +1 more source

A 100-element planar Schottky diode grid mixer [PDF]

open access: yes, 1992
The authors present a Schottky diode grid mixer suitable for mixing or detecting quasi-optical signals. The mixer is a planar bow-tie grid structure periodically loaded with diodes.
De Lisio, Michael P.   +4 more
core   +1 more source

GaN Nanowire Schottky Barrier Diodes

open access: yesIEEE Transactions on Electron Devices, 2017
A new concept of vertical gallium nitride (GaN) Schottky barrier diode based on nanowire (NW) structures and the principle of dielectric REduced SURface Field (RESURF) is proposed in this paper. High-threading dislocation density in GaN epitaxy grown on foreign substrates has hindered the development and commercialization of vertical GaN power devices.
Gourab Sabui   +7 more
openaire   +4 more sources

Impact of Annealing on CuInSe2 Thin Films and Its Schottky Interface [PDF]

open access: yesЖурнал нано- та електронної фізики, 2011
The room temperature current–voltage (I-V) characteristics of the Al/p-CuInSe2 Schottky Diodes fabricated on thermally evaporated CIS thin films, before and after annealing, were studied. Prior to their diode formation, the undertaken CIS thin films were
U. Parihar   +5 more
doaj  

Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy [PDF]

open access: yes, 2012
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods.
A. Arehart   +7 more
core   +3 more sources

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