Results 51 to 60 of about 42,398 (302)

Investigation of Current-Voltage Characteristics of Ni/GaN Schottky Barrier Diodes for Potential HEMT Applications [PDF]

Журнал нано- та електронної фізики, 2011
In the present work, the I-V characteristics of Ni/GaN Schottky diodes have been studied. The Schottky diodes, having different sizes using Ni/Au and ohmic contacts using Ti/Al/Ni/Au were made on n-GaN.
Ashish Kumar, Seema Vinayak, R. Singh
doaj  

Ultrastable Photoactive Halide Perovskite Nanocrystal‐Sensitized SnO2 Nanorods for Room‐Temperature NO2 Detection

Advanced Functional Materials, EarlyView.
ABSTRACT Metal oxide (MOx)‐based NO2 gas sensors typically require high temperatures or ultraviolet light, limiting their practical use. To enable visible‐light activation at room temperature, efficient and stable photosensitizers should be integrated with nanostructured MOx hosts.
Yeonji Yuk, Dokyum Kim, Jun‐Cheol Park, Yoonsung Jung, Inhyeok Oh, Donghyeon Lee, Yejoon Kim, Ji‐Eun Yeo, Young Min Song, Chang‐Lyoul Lee, Sanghan Lee   +10 more
wiley   +1 more source

Effects of deposition temperature on the electrical properties of Ti/SiC Schottky barrier diodes

AIP Advances, 2017
Ti Schottky contacts were deposited on n-type 4H-SiC at different temperatures ranging from 28 oC to 900 oC using a magnetron sputtering deposition system to fabricate Schottky barrier diodes.
Tom N. Oder, Krishna C. Kundeti, Nicholas Borucki, Sundar B. Isukapati   +3 more
doaj   +1 more source

Fabrication and characterization of optical float-zone (100) β-Ga2O3 Schottky diodes [PDF]

AIP Advances
We conducted a rapid fabrication of Ga2O3 vertical Schottky barrier diodes using Ti/Au for ohmic contacts and Ni/Au for Schottky contacts on a (100) Sn-doped β-Ga2O3 grown by the optical float-zone method and analyzed the device characteristics and ...
Zubear Nowshad Pasha, Vijayakumar Subramanian, Ved Krishna, Konstantinos Floros, Ingo Ludtke, Shanthi Subashchandran, S. Ganesamoorthy, Naresh Gunasekar   +7 more
doaj   +1 more source

Breakdown Characteristics of Schottky Barrier Diodes Used as Bypass Diodes in Photovoltaic Modules under Lightning Surges

Energies, 2023
Damage to photovoltaic power-generation systems by lightning causes the failure of bypass diodes (BPDs) in solar cell modules. Bypass diodes damaged by lightning experience high-resistance open- or short-circuit failures.
Toshiyuki Hamada, Ikuo Nanno, Norio Ishikura, Masayuki Fujii, Shinichiro Oke   +4 more
doaj   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

Advanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda, Thor Hvid‐Olsen, Christina Hoegfeldt, Anshu Gupta, Alessandro Palliotto, Fardin Ghaffari‐Tabrizi, Maja A. Dunstan, Kasper S. Pedersen, Dae‐Sung Park, Damon J. Carrad, Thomas Sand Jespersen, Felix Trier   +11 more
wiley   +1 more source

Development of photocatalysis‐membrane separation reactor systems for aqueous pollutant removal

PhotoMat, EarlyView., 2023
Abstract Background In our rapidly expanding society, the demand for clean water has steadily emerged as one of the most critical issues, promoting the development of numerous water treatment strategies. Aims Coupling photocatalysis and membrane separation technology provides an energy saving and environment‐friendly as well as sustainable method for ...
Junyang Zhang, Yingchun Miao, Yuning Huo, Hexing Li   +3 more
wiley   +1 more source

Comprehensive investigation of GaN and AlN-on-GaN JBS diodes: optimizing inter-p + spacing for high-power applications

Discover Electronics
A thorough investigation of Gallium Nitride and Aluminum Nitride-on-Gallium Nitride Junction Barrier Schottky diodes, focusing on inter-p + spacings of 0.5 to 2.5 μm, was conducted to optimize the performance for high-power, high-frequency, and high ...
Sana Nasir, Gul Hassan, Habib Ahmad
doaj   +1 more source

Light Ions Response of Silicon Carbide Detectors [PDF]

, 2006
Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18 MeV were used.
Anokhin, Baliga, Bertuccio, Bertuccio, Bosisio, Bruzzi, C. Sfienti, Clarke, Cooper, Cunningham, Cunningham, Cunningham, Dulloo, E. Rapisarda, Elasser, G. Raciti, Heydt, Kinoshita, Knoll, La Via, Lee, Lindström, Lindström, M. De Napoli, Nava, Nava, Rogalla, Ruddy, Ruddy, Sciortino, Trew, Weitzel, Ziegler   +32 more
core   +2 more sources

Furan‐Substituted Phosphine‐Oxide as an Efficient Interfacial Modifier for Wide‐Bandgap Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
We report phosphine‐oxide interlayers for wide‐bandgap perovskite solar cells, in which tuned P = O Lewis basicity enables selective passivation of buried NiOx/perovskite interfaces and introduces interfacial dipoles that strengthen the built‐in field.
JeeHee Hong, Juan Anthony Prayogo, Soobin Heo, Jae Sung Yun, Dong Ryeol Whang, Dong Wook Chang, Hui Joon Park   +6 more
wiley   +1 more source