Results 61 to 70 of about 42,398 (302)
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Advanced Functional Materials, EarlyView.Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
A Method and Criterion for Repetitive Surge Current in Silicon Carbide Schottky Diodes
IEEE AccessThe need for efficient power-conversion systems in renewable energy, electric vehicles, and industrial power applications has motivated the development of wide-bandgap power semiconductor devices, such as the SiC Schottky diode.
Jenny Damcevska +3 more
doaj +1 more source
, 2017 Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintentional
Chabak, Kelson D. +6 more
core +2 more sources
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +2 more
core +1 more source
Advanced Functional Materials, EarlyView.A cross‐layer passivation strategy employing molecularly designed thiazol‐5‐ylmethanamine hydrochloride (TMACl) enables coherent defect regulation at the SnO2/perovskite interface, stabilizes both layers, promotes phase‐pure α‐FAPbI3 formation, and enhances charge extraction, delivering PCEs of 26.44% in rigid and 24.72% in flexible perovskite solar ...
Fan Shen +16 more
wiley +1 more source
Barrier Inhomogeneity of Schottky Diode on Nonpolar AlN Grown by Physical Vapor Transport
, 2019 An aluminum nitride (AlN) Schottky barrier diode (SBD) was fabricated on a nonpolar AlN crystal grown on tungsten substrate by physical vapor transport.
Dong, Dan +11 more
core +1 more source
Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application
Advanced Materials, EarlyView.This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong +12 more
wiley +1 more source
Design of Millimeter-wave Detector for Gyrotron Power Monitoring
, 2019 The real-time power monitoring of gyrotron is one of the key issues in the operation of electron cyclotron resonance heating system. The detector can be used for real-time power monitoring.
Liu, Fukun +3 more
core +1 more source
A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bertazzi, Francesco +7 more
core +1 more source
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
Advanced Materials, EarlyView.The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source