Results 71 to 80 of about 42,398 (302)

Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes

Advanced Electronic Materials
The intrinsic high non‐linearity of Schottky diodes with the latest improvements in performance, material, and design novelties have made them invaluable in the emerging devices ecosystem.
Zhanibek Bizak, Harold F. Mazo‐Mantilla, Linqu Luo, Camelia Florica, Georgian Melinte, Thomas D. Anthopoulos, Khaled N. Salama   +6 more
doaj   +1 more source

Barrier inhomogeneities of Al/p-In2Te3 thin film Schottky diodes [PDF]

, 2011
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of p-In2Te3/Al thin films Schottky diodes papered by Flash Evaporation technique were measured in the temperature range 303-335 K have been interpreted on the basis of the assumption
Desai, M.S., Desai, R.R., Lakshminarayana, D., Padha, N., Panchal, C.J., Patel, P.B., Sachdeva, Ramesh   +6 more
core  

Ideal Graphene/Silicon Schottky Junction Diodes [PDF]

Nano Letters, 2014
The proper understanding of semiconductor devices begins at the metal-semiconductor interface. The metal/semiconductor interface itself can also be an important device, as Schottky junctions often forms when the doping in the semiconductors is low. Here, we extend the analysis of metal-silicon Schottky junctions by using graphene, an atomically thin ...
Sinha, Dhiraj, Lee, Ji Ung
openaire   +3 more sources

Single‐Chromophore Homojunction Organic Solar Cells: A Path to Simplicity and Efficiency

Advanced Materials, EarlyView.
This perspective discusses how the intrinsic optoelectronic properties of organic semiconductors, their molecular packing in the solid‐state, and internal energetic gradients within a device can enable free‐charge carrier generation in homojunction organic solar cells.
Shaun McAnally, Paul L. Burn, Paul E. Shaw   +2 more
wiley   +1 more source

Single‐Atom Photocatalyst as Floatable Artificial Leaf for Upcycling Oceanic Plastic Waste

Advanced Materials, EarlyView.
To resolve the catastrophic disaster of oceanic plastic pollution, the novel Ru single atom loaded ZnIn2S4 photocatalysts, in the forms of powder or floatable artificial leaf, were prepared for direct conversion of raw polypropylene plastic into valuable chemicals. The optimized catalyst exhibits exceptional performance, with a total formic/acetic acid
Amin Talebian‐Kiakalaieh, Xin Xu, Wenzhong Ji, Yun Liu, Bingquan Xia, Jingrun Ran, Shi‐Zhang Qiao   +6 more
wiley   +1 more source

Comparative study of Au and Ni/Au gated AlGaN/GaN high electron mobility transistors

AIP Advances, 2019
This paper presents the electrical comparison of Au and Ni/Au gated HEMT devices and diodes. Au Schottky diodes on an AlGaN/GaN heterostructure exhibit better electrical performance in comparison to conventional Ni/Au diodes with an improved Schottky ...
Ajay Kumar Visvkarma, Chandan Sharma, Robert Laishram, Sonalee Kapoor, D. S. Rawal, Seema Vinayak, Manoj Saxena   +6 more
doaj   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Improving the reliability of Schottky diodes under the influence of electrostatic discharges [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012
Experimental studies of Schottky diodes with molybdenum barrier structure showed that resistance of the structures to electrostatic discharge depends on the design parameters, as well as on guard ring diffusion depth.
Sоlоdukha V. A., Turtsevich A. S., Solov’yov J. A., Rubtsevich I. I., Kerentsev A. F.   +4 more
doaj   +2 more sources

Charge recovery by vacuum annealing in β-Ga2O3 multi-fin trench Schottky barrier diodes [PDF]

APL Electronic Devices
In this work, we have demonstrated charge recovery in (001) β-Ga2O3 vertical structures after reactive ion etching. The charge recovery is achieved by annealing the etched structures under ultra-high vacuum.
Sushovan Dhara, Ashok Dheenan, Siddharth Rajan   +2 more
doaj   +1 more source

Schottky Barrier Engineering in n‐Type Organic Source‐Gated Transistors Enabling High Conductance

Advanced Materials Technologies, EarlyView.
This study introduces a modified source electrode architecture for n‐type organic source‐gated transistors (OSGTs). By integrating Schottky and Ohmic contact regions, the design achieves a thinner depletion envelope, enhancing mobility nearly tenfold and reducing threshold voltage.
Yonghee Kim, Jae Won Lee, Wonbeen Jeong, Eun Kwang Lee, Jiyoul Lee   +4 more
wiley   +1 more source