Results 1 to 10 of about 103,204 (298)

Device to Circuit Co‐Design Utilizing High‐Performance PEALD Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems [PDF]

Advanced Science
The development of oxide semiconductor devices for monolithic 3D (M3D) integration has largely remained at the device level, limiting progress toward large‐scale applications.
Wenhui Wang, Tao Zhang, Zelin Yuan, Haoran Peng, Jun Lan, Zhixiong Li, Yongle Wu, Xuewei Feng, Longyang Lin, Feichi Zhou, Panpan Zhang, Yida Li   +11 more
doaj   +2 more sources

Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy

IEEE Journal of the Electron Devices Society, 2021
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system.
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee   +7 more
doaj   +1 more source

Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays

IEEE Journal of the Electron Devices Society, 2023
In this paper, we present a detailed experimental investigation of high-temperature data retention in 3D floating-gate NAND Flash memory arrays. Data reveal that charge detrapping from the cell tunnel oxide and depassivation of traps in the string ...
Gerardo Malavena, Mattia Giulianini, Luca Chiavarone, Alessandro S. Spinelli, Christian Monzio Compagnoni   +4 more
doaj   +1 more source

Transistor Laser Antenna: Electromagnetic Model in Transmit and Receive Modes

IEEE Access, 2022
Transistor laser can drive recent innovative technologies like optical antennas and rectennas. To this end, this semiconductor device requires an accurate electromagnetic model capable of determining the antenna characteristics like radiation pattern ...
Arman Afsari, Paulo De Souza, Amin Abbosh, Yahya Rahmat-Samii   +3 more
doaj   +1 more source

Neural Approach for Modeling and Optimizing Si-MOSFET Manufacturing

IEEE Access, 2020
An optimal design of semiconductor device and its process uniformity are critical factors affecting desired figure-of-merits as well as reducing fabrication cost of fixing possible malfunctioning in semiconductor manufacturing.
Hyun-Chul Choi, Hyeok Yun, Jun-Sik Yoon, Rock-Hyun Baek   +3 more
doaj   +1 more source

Foreword Special Issue on Compact Modeling of Semiconductor Devices

IEEE Journal of the Electron Devices Society, 2020
This Special Issue is dedicated to recent research in the field of compact modeling of semiconductor devices. This is the first J-EDS Special Issue on compact modeling.
Benjamin Iniguez, Yogesh Singh Chauhan, Slobodan Mijalkovic, Kejun Xia, Jung-Suk Goo, Marcelo Pavanello, Marek Mierzwinski, Wladek Grabinski   +7 more
doaj   +1 more source

New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs

IEEE Journal of the Electron Devices Society, 2021
We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of ...
Benjamin Iniguez, Arokia Nathan, Alexander Kloes, Yvan Bonnassieux, Krunoslav Romanjek, Micael Charbonneau, Jan Laurens Van Der Steen, Gerwin Gelinck, Thomas Gneiting, Firas Mohamed, Gerard Ghibaudo, Antonio Cerdeira, Magali Estrada, Slobodan Mijalkovic, Ahmed Nejim   +14 more
doaj   +1 more source

Extreme Double/Triple Asymmetric Epitaxial Structure Based Diode Lasers for High Powers and High Efficiencies

IEEE Photonics Journal, 2022
In edge-emitting high power laser diodes, the longitudinal spatial hole burning (LSHB) effect induced by the inhomogeneous photon and carrier distributions and the non-linear process, two-photon absorption (TPA), are demonstrated to the key causes of ...
Xiaolei Zhao, Siwei Zeng, Lance Sweat, Lin Zhu   +3 more
doaj   +1 more source

Two-dimensional hole precession in an all-semiconductor spin field effect transistor [PDF]

, 2004
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure.
A.A. Kiselev, B. Lee, B.H. Lee, C. Ciuti, D. Grundler, E.A. de Andrada e Silva, E.I. Rashba, G. Lommer, G. Schmidt, Giuseppe Iannaccone, H. Ohno, J. Fernàndez-Rossier, J. Nitta, J. Nitta, J. Schliemann, J.C. Egues, J.M. Luttinger, J.P. Lu, Jürgen König, L. Pfeiffer, M. Abolfath, M. Governale, M. Grayson, Marco G. Pala, Michele Governale, R. Winkler, R. Winkler, S. Datta, S. Luryi, S.A. Wolf, T. Dietl, T. Dietl, T. Dietl, T. Koga, T. Matsuyama, T. Schäpers, Ulrich Zülicke, Y.A. Bychkov   +37 more
core   +3 more sources

Theoretical Principles of Single-Molecule Electronics: A Chemical and Mesoscopic View [PDF]

, 2004
Exploring the use of individual molecules as active components in electronic devices has been at the forefront of nanoelectronics research in recent years.
Albright, Altshuler, Ando, Aviram, Bardeen, Becke, Beenakker, Binnig, Binnig, Brandbyge, Brivio, Buttiker, Buttiker, Buttiker, Christen, Chu, Damle, Danielewicz, Datta, Dennard, Di Ventra, Dreizler, Eggins, Ferry, Feynman, Gramespacher, Haug, Hay, Hedin, Heine, Henisch, Hey, Hirose, Hoffmann, Imry, Jauho, Joachim, Kadanoff, Kastner, Keldysh, Kubo, Lake, Landauer, Landauer, Lang, Lang, Lang, Lang, Langreth, Lundqvist, McLennan, Meindl, Meir, Nalewajski, Nitzan, Parr, Reed, Rhoderick, Skotheim, Stefanucci, Stevens, Sze, Taylor, Tersoff, Tersoff, Tersoff, van Leeuwen, Williams, Xue, Xue, Xue, Xue, Xue, Xue, Xue, Yaish   +75 more
core   +1 more source