Results 11 to 20 of about 103,204 (298)
When self-consistency makes a difference [PDF]
, 2008 Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits.
Bonani, Fabrizio +5 more
core +1 more source
Hybrid quantum-classical modeling of quantum dot devices [PDF]
, 2017 The design of electrically driven quantum dot devices for quantum optical applications asks for modeling approaches combining classical device physics with quantum mechanics.
Kantner, Markus +2 more
core +3 more sources
IEEE Journal of the Electron Devices Society, 2020 Comprehensive channel material benchmarking for n- and pMOS are performed considering effects of quantum transport and carrier scattering. Various channel material options (Si, InAs, In0.7Ga0.3As, In0.53Ga0.47As, GaAs, and Ge for nMOS, Si and Ge for pMOS)
Raseong Kim, Uygar E. Avci, Ian A. Young
doaj +1 more source
Physics of electro-thermal effects in ESD protection devices [PDF]
, 1991 Damage in ESD protection devices can be caused by high local temperatures resulting from heat generation by an ESD pulse. In order to obtain physical insight into the process that leads to permanent damage, device simulations of coupled thermal and ...
Beltman, R.A.M. +3 more
core +10 more sources
A Physical Model for the Hysteresis in MoS2 Transistors
IEEE Journal of the Electron Devices Society, 2018 Even though the hysteresis in the gate transfer characteristics of two-dimensional (2D) transistors is a frequently encountered phenomenon, the physics behind it are up to now only barely understood, let alone modeled.
Theresia Knobloch +8 more
doaj +1 more source
New approach to power semiconductor devices modeling
Journal of Telecommunications and Information Technology, 2004 The main problems occurring during high power device modeling are discussed in this paper. Unipolar and bipolar device properties are compared and the problems concerning high time-constant values related to the diffusion phenomena in the large base are
Andrzej Napieralski +1 more
doaj +1 more source
Classical solutions of drift-diffusion equations for semiconductor devices: the 2d case [PDF]
, 2006 We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we reformulate the (generalized) van Roosbroeck system as an evolution equation for the potentials to the driving forces of the currents of electrons and holes.
Kaiser, Hans-Christoph +2 more
core +3 more sources
Evaluating Stresses in SiO2 Thin Films Using Molecular Dynamics Simulations
Engineering Proceedings, 2023 Semiconductor electronics is transforming computing, communication, energy harvesting, automobiles, biotechnology, and other electronic device landscapes.
Sachin Shendokar +3 more
doaj +1 more source
Hierarchical approach to 'atomistic' 3-D MOSFET simulation [PDF]
, 1999 We present a hierarchical approach to the 'atomistic' simulation of aggressively scaled sub-0.1-μm MOSFETs. These devices are so small that their characteristics depend on the precise location of dopant atoms within them, not just on their average ...
Asenov, A. +3 more
core +2 more sources
A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]
, 2010 We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bertazzi, Francesco +7 more
core +1 more source