Results 241 to 250 of about 103,204 (298)

Power semiconductor device modeling with Model Architect

COMPEL 2000. 7th Workshop on Computers in Power Electronics. Proceedings (Cat. No.00TH8535), 2002
A new modeling environment for the creation, testing and validation of HDL-based models is presented. The environment is designed to support the generation of multiple hardware description languages including MAST, VHDL-AMS and Verilog-AMS. The software architecture and feature set of the environment is described.
H.A. Mantooth, J.P. Skudlarek, J.R. Carlson, D.K. Cooper, I.E. Getreu, G. Graham, S. Pothier, R. Vedam, C.M. Wolff   +8 more
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Thermal models for semiconductor device simulation

HITEN 99. Third European Conference on High Temperature Electronics. (IEEE Cat. No.99EX372), 2003
We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed is functions of the lattice temperature and in the case of semiconductor alloys of the material composition.
V. Palankovski, S. Selberherr
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Numerical modeling of advanced semiconductor devices

IBM Journal of Research and Development, 1992
Numerical modeling of the electrical behavior of semiconductor devices is playing an increasingly important role in their development. Examples that pertain to advanced MOSFETs and bipolar transistors are presented to illustrate the importance of taking into account three-dimensional as well as nonequilibrium and nonlocal physical phenomena to ...
W. Lee, S. E. Laux, M. V. Fischetti, G. Baccarani, A. Gnudi, J. M. C. Stork, J. A. Mandelman, E. F. Crabbe, M. R. Wordeman, F. Odeh   +9 more
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SPICE MODELING OF COMPOUND SEMICONDUCTOR DEVICES

International Journal of High Speed Electronics and Systems, 1998
We review recent advances in the modeling of novel and advanced semiconductor devices, including state-of-the-art MESFET and HFETs, heterodimensional FETs, resonant tunneling devices, and wide-bandgap semiconductor transistors. We emphasize analytical, physics-based modeling incorporating the important effects present in modern day devices, including ...
BENJAMIN IÑIGUEZ, TOR A. FJELDLY, MICHAEL S. SHUR, TROND YTTERDAL   +3 more
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Noise modeling of semiconductor devices

6th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIKS 2003., 2004
Small-signal noise models for semiconductor devices, such as diodes, bipolar junction transistors and field effect transistors, have been synthesized in this paper. The modeling has been performed on the basis of mathematical equations. The models take into consideration all kinds of noises: thermal noise, shot noise, and flicker noise. The models have
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Volterra Integral Equation Models for Semiconductor Devices

Mathematical Methods in the Applied Sciences, 1996
One possibility of modelling semiconductor devices are the van Roosbroeck drift-diffusion equations, a nonlinear system of partial differential equations for the electrostatic potential and the spatial densities of the electrons and holes in the device.
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Electron Devices on Piezoelectric Semiconductors: A Device Model

IEEE Transactions on Sonics and Ultrasonics, 1984
The effects of acoustic waves on the terminal characteristics of electron devices on piezoelectric semiconductors are considered. The piezoelectric displacement charge is regarded as a time- and space-vary ing perturbation of the doping density of the semiconductor.
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Mathematical Modeling of Semiconductor Devices

1986
In this Chapter we shall formulate the system of partial differential equations, which describes potential distribution, carrier concentrations and current flow in semiconductor devices. We shall supplement the system by boundary conditions representing the interaction of the device with the outer world and discuss the modeling of physical parameters ...
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Mathematical Model of Semiconductor Devices

2014
This chapter describes the reasoning that leads from the single-particle Schrodinger equation for an electron in a crystal to the mathematical model of semiconductor devices. The latter is a set of equations describing the evolution in space and time of a number of average quantities of interest: with reference to the electrons of the conduction band ...
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Semiconductor nonlinear device modeling using multiwavelets

Microwave and Optical Technology Letters, 2003
AbstractModeling and simulation of seminconductor devices requires solution of highly nonlinear equations, such as the Boltzmann transport, hydrodynamic, and drift‐diffusion equations. The conventional finite‐element method (FEM) and finite difference (FD) schemes always result in oscillatory results, and are ineffective when the cell Reynolds number ...
Ke Wang, George W. Pan, R. Techentin, B. Gilbert   +3 more
openaire   +1 more source