Results 251 to 260 of about 103,204 (298)
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Traditional Modelling of Semiconductor Devices

1995
The study of semiconductor devices spans less than 50 years and the evolution of modelling techniques occupies an even shorter interval. Traditionally, the electrical properties of semiconductor devices have been modelled using equivalent circuit models, where the electrical behaviour of the device at the connecting terminals is represented by a ...
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Fourier method modeling of semiconductor devices

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1990
A high-order approach to a numerical modeling of semiconductor devices is presented. The method combines the classical Fourier-series Galerkin procedure, a special matrix calculus, and fast numerical pseudospectral techniques. The proposed algorithm renders the exact solution (machine precision) of the semiconductor equations in the closed form of a ...
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Asymptotic Methods in Semiconductor Device Modeling

1988
The behavior of metal oxide semiconductor field effect transistors (MOSFETs) with small aspect ratio and large doping levels is analyzed using formal perturbation techniques. Formally, we will show that in the limit of small aspect ratio there is a region in the middle of the channel under the control of the gate where the potential is one-dimensional.
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Semiconductor Device Modeling

Journal of Computational and Theoretical Nanoscience, 2008
D. Vasileska   +4 more
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Fourier approach to semiconductor device modelling

International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 1989
AbstractA novel procedure for the numerical modelling of current transport in semiconductor devices is presented. The method is based on high‐order trigonometric expansions (Fourier series) of the solution. The expansion coefficients are calculated in a Galerkin‐type algorithm.
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Numerical modelling of multilayer semiconductor devices

1990
DUE TO COPYRIGHT RESTRICTIONS ONLY AVAILABLE FOR CONSULTATION AT ASTON UNIVERSITY LIBRARY AND INFORMATION SERVICES WITH PRIOR ...
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Modelling & Semiconductor Devices

2023 International Semiconductor Conference (CAS), 2023
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Semiconductor device simulation: The hydrodynamic model

IEEE Potentials, 2004
VLSI (very large scale integrated) chips incorporate hundreds of millions of semiconductor circuits. To predict the performance of VLSI circuits, the current-voltage (I-V) characteristics of the semiconductor devices are required. Semiconductor device simulation codes provide a way of predicting I-V curves as device parameters are varied, without ...
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment

Ca-A Cancer Journal for Clinicians, 2022
Jun J Mao,, Msce   +2 more
exaly  

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