Results 21 to 30 of about 103,204 (298)
Numerical simulation and compact modeling of low voltage pentacene based OTFTs
Journal of Science: Advanced Materials and Devices, 2019 As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design.
A.D.D. Dwivedi +3 more
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Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter [PDF]
, 2002 We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter.
Asenov, A., Brown, A.R., Watling, J.R.
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A Time Delay Neural Network Based Technique for Nonlinear Microwave Device Modeling
Micromachines, 2020 This paper presents a nonlinear microwave device modeling technique that is based on time delay neural network (TDNN). The proposed technique can accurately model the nonlinear microwave devices when compared to static neural network modeling method.
Wenyuan Liu +6 more
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Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations [PDF]
, 2007 This paper investigates the validity of the parabolic effective mass approximation (EMA), which is almost universally used to describe the size and bias-induced quantization in n-MOSFETs.
Esseni, David +4 more
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IEEE Journal of the Electron Devices SocietyA method directly solving Fowler-Nordheim tunneling current equations for extracting the effective tunneling area, the barrier heights of the top and bottom electrodes and the electron tunneling effective mass in metal-insulator-metal diodes is ...
Wallace Lin, Darsen D. Lu
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Effect of Substrate Choice on Transient Performance of Lateral GaN FETs
IEEE Journal of the Electron Devices Society, 2020 This brief presents a study on the effect of substrate choice on the performance of lateral GaN transistors. This is accomplished using a previously calibrated TCAD model of the device which was used to investigate the effect of substrate choice on ...
Michael R. Hontz +2 more
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On a drift-diffusion system for semiconductor devices
, 2016 In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions.
Granero-Belinchón, Rafael
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IEEE AccessApplication of machine learning (ML) approaches has recently expanded within a wide range of domains, including semiconductor devices. Their strong potential resulted in increasing number of research in semiconductor device modeling and simulation.
Kazi Mohammad Mamun +2 more
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Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]
, 2001 The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E. +3 more
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Reliability of Miniaturized Transistors from the Perspective of Single-Defects
Micromachines, 2020 To analyze the reliability of semiconductor transistors, changes in the performance of the devices during operation are evaluated. A prominent effect altering the device behavior are the so called bias temperature instabilities (BTI), which emerge as a ...
Michael Waltl
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