Results 31 to 40 of about 103,204 (298)
IEEE Access, 2019 Equivalent circuit network simulation is widely used in modeling solar cells in three dimensions. However, the computational time and numerical instability increases dramatically when the number of circuit element increases.
Kan-Hua Lee +2 more
doaj +1 more source
Electrical and Data-Retention Characteristics of Two-Terminal Thyristor Random Access Memory
IEEE Open Journal of Nanotechnology, 2020 Two-terminal (2-T) thyristor random access memory (TRAM) based on nanoscale cross-point vertical array is investigated in terms of lengths and doping concentrations of storage regions for long data retention time (Tret).
Hyangwoo Kim +5 more
doaj +1 more source
Compact conversion and cyclostationary noise modelling of pn junction diodes in low-injection - Part I: Model derivation [PDF]
, 2004 Starting from the well known low-injection approximation, a closed form, analytical compact model is derived for the small-signal (SS) and forced quasi-periodic operation of junction diodes. The model determines the small-signal and conversion admittance
Bonani, Fabrizio +2 more
core +1 more source
Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +2 more
core +1 more source
Generating Predictive Models for Emerging Semiconductor Devices
IEEE Journal of the Electron Devices SocietyCircuit design requires fast and scalable models which are compatible to modern electronic design automation tools. For this task typically analytical compact models are preferred.
Maximilian Reuter +7 more
doaj +1 more source
Design E–k diagram in semiconductors for stable FETs operation [PDF]
AIP AdvancesIn the current study, we report on the modeling and design of the GaxAl1−xAs semiconductor material to help improve the stable operation of RF amplifiers.
S. Mil’shtein, P. Ersland
doaj +1 more source
A Compact Model for SiC Schottky Barrier Diodes Based on the Fundamental Current Mechanisms
IEEE Journal of the Electron Devices Society, 2020 We develop a complete compact model to describe the forward current, reverse current, and capacitance of SiC Schottky barrier diodes. The model is based on the fundamental current mechanisms of thermionic emission and tunneling, and is usable over a ...
Jordan R. Nicholls, Sima Dimitrijev
doaj +1 more source
Modeling of CMOS devices and circuits on flexible ultrathin chips [PDF]
, 2017 The field of flexible electronics is rapidly evolving. The ultrathin chips are being used to address the high-performance requirements of many applications.
Dahiya, Ravinder +3 more
core +1 more source
Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
wiley +1 more source
Fundamental ResearchAdvancements in the semiconductor industry introduce novel channel materials, device structures, and integration methods, leading to intricate physics challenges when characterizing devices at circuit level.
Xufan Li +10 more
doaj +1 more source