Results 41 to 50 of about 103,204 (298)

Substrate Partitioning Scheme for Compact Charge Modeling of Multigate MOSFETs

IEEE Journal of the Electron Devices Society, 2017
A modeling approach for the charge-voltage characteristics of multigate metal-oxide-semiconductor field-effect transistors with complicated cross sections is proposed.
Sung-Min Hong, Junsung Park
doaj   +1 more source

Analysis of Chromatic Aberration Effects in Triple-Junction Solar Cells Using Advanced Distributed Models [PDF]

, 2011
The consideration of real operating conditions for the design and optimization of a multijunction solar cell receiver-concentrator assembly is indispensable.
Algora del Valle, Carlos, Espinet González, Pilar, García Vara, Iván, Rey-Stolle Prado, Ignacio   +3 more
core   +2 more sources

Piezoresistive Monitoring of Carbon Nanomaterial‐Reinforced Epoxy Composites Under Cyclic and Fatigue Loading: A Review

Advanced Engineering Materials, EarlyView.
Carbon nanomaterial‐reinforced epoxy composites exhibit pronounced piezoresistive behavior, enabling intrinsic damage sensing under cyclic and fatigue loading. This review critically compares carbon nanotube and graphene systems, correlating filler content, percolation threshold, and gauge factor with sensing stability and damage evolution.
J. M. Parente, J. Nunes‐Pereira, A. P. Silva, P. N. B. Reis   +3 more
wiley   +1 more source

Suppressing Oxidation-Enhanced Diffusion of Boron in Silicon With Oxygen-Inserted Layers

IEEE Journal of the Electron Devices Society, 2018
Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in Sentaurus Process is shown to match experimental ...
Daniel Connelly, Richard Burton, Nyles W. Cody, Pavel Fastenko, Marek Hytha, Robert Stephenson, Hideki Takeuchi, Keith Doran Weeks, Robert Mears   +8 more
doaj   +1 more source

Foreword

IEEE Journal of the Electron Devices Society, 2020
This Special Issue is dedicated to recent research in the field of compact modelling for circuit design. The topics included all device structures, provided it was demonstrated thet the presented compact modelling solutions were implementable in circuit ...
Benjamin Iniguez, Lluis F. Marsal, Arturo Escobosa, Fernando Guarin   +3 more
doaj   +1 more source

Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study [PDF]

, 2001
In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 mn MOSFETs.
Asenov, A, Brown, AR, Davies, JH, Saini, S, Slavcheva, G   +4 more
core   +2 more sources

3D‐Printed Giant Magnetoresistive (GMR) Sensors Based on Self Compliant Springs

Advanced Engineering Materials, EarlyView.
This work explores 3D‐printed GMR sensors utilizing self‐compliant spring structures and conductive PLA composites. By optimizing arm width, we achieved high piezoresistive (0.34%/mm) and magnetoresistive (0.77%/mT) sensitivities. Demonstrated through Bluetooth‐integrated pressure and magnetic position sensing, these full printed low‐cost, customizable
Josu Fernández Maestu, Nelson Pereira, Javier Vicente, Carmen Rial Tubio, Senentxu Lanceros‐Méndez   +4 more
wiley   +1 more source

Implementation of TFET SPICE Model for Ultra-Low Power Circuit Analysis

IEEE Journal of the Electron Devices Society, 2016
We proposed a compact model for tunneling field effect transistors (TFETs), which combines BSIM4. Our proposed model for tunneling current is based on a drift-diffusion model under the gradual-channel approximation. The total charge for the drain current
Chika Tanaka, Kanna Adachi, Motohiko Fujimatsu, Akira Hokazono, Yoshiyuki Kondo, Shigeru Kawanaka   +5 more
doaj   +1 more source

Efficient and realistic device modeling from atomic detail to the nanoscale

, 2013
As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for comprehending the critical multi-scale, multi-physics phenomena through ...
Ajoy, A., Fonseca, J. E., Hegde, G., Ilatikhameneh, H., Jiang, Z., Klimeck, G., Kubis, T., Novakovic, B., Povolotskyi, M., Sengupta, P., Tan, Y.   +10 more
core   +1 more source

Electrical Conductivities of Conductors, Semiconductors, and Their Mixtures at Elevated Temperatures

Advanced Engineering Materials, EarlyView.
This article presents a comprehensive review of temperature‐dependent electrical conductivity data for multiple material classes at elevated temperatures, highlighting a persistent conductivity gap between metals and semiconductors in the range of 102$\left(10\right)^{2}$– 107$\left(10\right)^{7}$ S/m. Metal–ceramic irregular metamaterials are proposed
Valentina Torres Nieto, Marcia A. Cooper
wiley   +1 more source