Results 51 to 60 of about 103,204 (298)

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Scientific Reports, 2022
Amorphous oxide semiconductor (AOS) field-effect transistors (FETs) have been integrated with complementary metal-oxide-semiconductor (CMOS) circuitry in the back end of line (BEOL) CMOS process; they are promising devices creating new and various ...
Donguk Kim, Je-Hyuk Kim, Woo Sik Choi, Tae Jun Yang, Jun Tae Jang, Attilio Belmonte, Nouredine Rassoul, Subhali Subhechha, Romain Delhougne, Gouri Sankar Kar, Wonsok Lee, Min Hee Cho, Daewon Ha, Dae Hwan Kim   +13 more
doaj   +1 more source

Corrosion and Process Analysis of a Preoxidized MgO Recyclate‐Based Cermet Anode in Laboratory‐Scale Na‐Cryolite Molten Salt Electrolysis of Aluminum at 1000°C

Advanced Engineering Materials, EarlyView.
EDX elemental map of the pre‐oxidized MgO–steel cermet anode cross section after electrolysis. The development of inert anodes for aluminum electrolysis remains challenging due to the high corrosivity of cryolite‐based melts at 950°C–1000°C. This study investigates the corrosion and process behavior of a carbon‐free MgO–steel cermet anode derived from ...
Alexander Adamczyk, Farhan Hossain, Felipe A. Garcia Paz, Serhii Yaroshevskyi, Felix Drechsler, Daniel Vogt, Christos G. Aneziris, Alexandros Charitos   +7 more
wiley   +1 more source

Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

East European Journal of Physics
In recent years, advances in optoelectronics and electronics have prioritized optimizing semiconductor device performance and reducing power consumption by modeling new semiconductor device geometries.
Jo`shqin Sh. Abdullayev, Ibrokhim B. Sapaev   +1 more
doaj   +1 more source

The Quantum Hydrodynamic Model for Semiconductor Devices [PDF]

SIAM Journal on Applied Mathematics, 1994
The article under review deals with the quantum hydrodynamic (QHD) equations for the charge transport simulation in quantum semiconductor devices. It is well-known that the behaviour of quantum fluid near thermal equilibrium and in the high temperature limit can be approximated by adding \({\mathcal O} (\hbar^ 2)\) terms to the classical fluid ...
openaire   +1 more source

Bias‐Free Highly Efficient and Stable Dye‐Sensitized Photoelectrochemical Cells via Cascade Charge Transfer

Advanced Functional Materials, EarlyView.
A buried‐junction DSPEC design is introduced that leverages cascade charge transfer to enhance efficiency, stability, and versatility. This approach facilitates effective charge transfer and minimizes recombination losses, leading to significant improvements.
Jun‐Hyeok Park, Kyounglim Kim, Jinyoung Lee, Sarang Kim, Gwangsu Yoon, So Yeon Yoon, Jeong Kyeong Lee, Ji‐Wook Jang, Tae‐Hyuk Kwon   +8 more
wiley   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

Advanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu, Christof Wöll, Stefan Bräse   +2 more
wiley   +1 more source

Large-Scale Training in Neural Compact Models for Accurate and Adaptable MOSFET Simulation

IEEE Journal of the Electron Devices Society
We address the challenges associated with traditional analytical models, such as BSIM, in semiconductor device modeling. These models often face limitations in accurately representing the complex behaviors of miniaturized devices.
Chanwoo Park, Seungjun Lee, Junghwan Park, Kyungjin Rim, Jihun Park, Seonggook Cho, Jongwook Jeon, Hyunbo Cho   +7 more
doaj   +1 more source

Parameter Extraction for the PSPHV LDMOS Transistor Model

IEEE Journal of the Electron Devices Society, 2020
This paper details a robust parameter extraction flow for the PSPHV LDMOS transistor model. The procedure uses a global scaling parameter set and accounts for self-heating.
Kejun Xia, Colin C. McAndrew, Ronald Van Langevelde   +2 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source