Results 71 to 80 of about 103,204 (298)
Emitter-Length Scalable Small Signal and Noise Modeling for InP Heterojunction Bipolar Transistors
IEEE Access, 2019 In this paper, an emitter-length scalable noise and small signal model for InP heterojunction bipolar transistor (HBT) are presented. A set of scalable expressions for noise parameters based on hybrid-π topology in the low-frequency ranges are ...
Ao Zhang, Jianjun Gao
doaj +1 more source
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2018 Ion-selective field effect transistors (ISFETs) exhibit instability, commonly known as drift, in the form of a slow, monotonic, temporal increase in the threshold voltage of the device.
Ali Elyasi +2 more
doaj +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Advanced Functional Materials, EarlyView.In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
Three‐dimensional Antimony Sulfide Based Flat Optics
Advanced Functional Materials, EarlyView.This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang +18 more
wiley +1 more source
Exciton Binding Energy Modulation in 2D Perovskites: A Phenomenological Keldysh Framework
Advanced Functional Materials, EarlyView.The intrinsic screening effects are successfully decoupled from structural distortion by rigorously designing a series of 2D perovskites. This enabled us to demonstrate how the dielectric environment modulates the quasiparticle bandgap and exciton binding energy.
Kitae Kim +15 more
wiley +1 more source
Recent research progress of SiC superjunction devices
机车电传动, 2023 Because of its excellent physical and chemical properties, silicon carbide (SiC) is suitable for manufacturing semiconductor devices working under high temperature and high power.
ZHANG Jinping +4 more
doaj
IEEE Journal of the Electron Devices Society, 2015 This paper describes the potential of tunable strain in field-effect transistors to boost performance of digital logic. Voltage-controlled strain can be imposed on a semiconductor body by the integration of a piezoelectric material improving transistor ...
Raymond J. E. Hueting +4 more
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, 2004 We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale electronic ...
C.W. J. Beenakker +35 more
core +1 more source
Rational Device Design and Doping‐Controlled Performance in Fast‐Response π‐Ion Gel Transistors
Advanced Functional Materials, EarlyView.π‐Ion gel transistors (PIGTs) achieve extraordinary transconductance and stability through device configuration optimization, high‐mobility conjugated polymer selection, and hole scavenger doping. The optimized PIGTs maintain performance on flexible substrates, enabling printed, fast‐response, and wearable electronics.
Masato Kato +10 more
wiley +1 more source