Results 81 to 90 of about 103,204 (298)

Semiconductor technology program. Progress briefs [PDF]

open access: yes
Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep
Bullis, W. M.
core   +1 more source

Coexisting Rashba/Dresselhaus Spin Splitting in Solution‐Processed Bournonite Films Using Circular Photogalvanic Effect

open access: yesAdvanced Functional Materials, EarlyView.
Circular photogalvanic effect measurements and first‐principles calculations reveal spin‐splitting states in solution‐processed bournonite films (CuPbSbS3) due to structural and bulk inversion asymmetry. The results provide experimental confirmation of coexisting Rashba and Dresselhaus spin‐splitting states in this non‐centrosymmetric chalcogenide ...
Aeron McConnell   +5 more
wiley   +1 more source

Behavioral Modeling and Simulation of Semiconductor Devices and Circuits Using VHDL-AMS

open access: yesIranian Journal of Electrical and Electronic Engineering, 2008
During the past few years, a lot of work has been done on behavioral models and simulation tools. But a need for modeling strategy still remains. The VHDL-AMS language supports the description of analog electronic circuits using Ordinary Differential ...
Gh. R. Karimi, and S. Mirzakuchaki
doaj  

Intelligent Manufacturing: TCAD-Assisted Adaptive Weighting Neural Networks

open access: yesIEEE Access, 2018
Using machine intelligence on device and process performance prediction is an emerging methodology in the IC industry. While semiconductor technology computer-aided design (TCAD) has been researched and developed for over 30 years, it should contribute ...
Chien Y. Huang   +5 more
doaj   +1 more source

Analytical and Numerical Study of Photocurrent Transients in Organic Polymer Solar Cells

open access: yes, 2010
This article is an attempt to provide a self consistent picture, including existence analysis and numerical solution algorithms, of the mathematical problems arising from modeling photocurrent transients in Organic-polymer Solar Cells (OSCs).
Ascher   +34 more
core   +1 more source

Efficient NiOx Hole Transport Layers Enabled by Multifunctional MXenes for High‐Performance Tin‐Lead Perovskite Solar Cells

open access: yesAdvanced Functional Materials, EarlyView.
An efficient NiOx HTL is successfully prepared by introducing MXene as an additive without further surface modification to fabricate high‐performance FASn0.5Pb0.5I3 perovskite solar cells. The introduction of MXene contributes to improved conductivity of NiOx, better aligned at NiOx/perovskite interfaces, and enhanced quality of perovskite films ...
Lijun Chen   +12 more
wiley   +1 more source

Numerical investigation of a graphene-on-semiconductor device for optical monitoring of cell electrophysiology

open access: yesiScience
Summary: Spatially resolved sensing devices for electrostatic potentials are extremely useful for characterization of living cells, however, many current techniques lack the speed necessary to capture spatially resolved, functional information of cells ...
Jon Gorecki, Steffi Krause
doaj   +1 more source

Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures

open access: yes, 2003
We study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The spin dynamics is controlled by the spin-orbit interaction, which arises via the Dresselhaus (bulk asymmetry) and Rashba (well asymmetry) mechanisms ...
Cheng, Ming-C.   +3 more
core   +1 more source

The Effect of Purcell Cavities on the Lifetime of Thermally Activated Delayed Fluorescent Emitters

open access: yesAdvanced Functional Materials, EarlyView.
A pressing challenge to OLED displays and lighting is to balance high efficiency and long operational lifetime in the deep blue spectrum. The Purcell effect can reduce the triplet density and hence the probability for destructive energy‐driven triplet annihilation events that limit the OLED lifetime. Here we study of the Purcell effect on two different
Sritoma Paul   +4 more
wiley   +1 more source

A High-Performance InAs/GaSb Core-Shell Nanowire Line-Tunneling TFET: An Atomistic Mode-Space NEGF Study

open access: yesIEEE Journal of the Electron Devices Society, 2019
Using a tight-binding mode-space NEGF technique, we explore the essential physics, design and performance potential of the III-V core-shell (CS) nanowire (NW) heterojunction tunneling field-effect transistor (TFET).
Aryan Afzalian   +4 more
doaj   +1 more source

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