Results 1 to 10 of about 550,773 (400)

Device reliability challenges for modern semiconductor circuit design – a review [PDF]

open access: goldAdvances in Radio Science, 2009
Product development based on highly integrated semiconductor circuits faces various challenges. To ensure the function of circuits the electrical parameters of every device must be in a specific window.
C. Schlünder
doaj   +4 more sources

Review of Power Semiconductor Device Reliability for Power Converters

open access: goldCPSS Transactions on Power Electronics and Applications, 2017
The investigation shows that power semiconductor devices are the most fragile components of power electronic systems.Improving the reliability of power devices is the basis of a reliable power electronic system, and in recent years, many studies have focused on power device reliability.This paper describes the current state of the art in reliability ...
Xiong Du, Cai Jie, Luowei Zhou, Bo Wang
semanticscholar   +4 more sources

2D Junction Profiling on Semiconductor Device Reliability Fail [PDF]

open access: bronzeMicroscopy and Microanalysis, 2017
Michael J. MacDonald   +7 more
semanticscholar   +4 more sources

Near-zero-field magnetoresistance measurements: A simple method to track atomic-scale defects involved in metal-oxide-semiconductor device reliability.

open access: hybridReview of Scientific Instruments, 2022
We demonstrate the ability of a relatively new analytical technique, near-zero-field magnetoresistance (NZFMR), to track atomic-scale phenomena involved in the high-field stressing damage of fully processed Si metal-oxide-semiconductor field-effect ...
S. Moxim   +6 more
semanticscholar   +3 more sources

Enhance Reliability of Semiconductor Devices in Power Converters [PDF]

open access: goldElectronics, 2020
As one of the most vulnerable components to temperature and temperature cycling conditions in power electronics converter systems in these application fields as wind power, electric vehicles, drive system, etc., power semiconductor devices draw great concern in terms of reliability.
Minh Hoang Nguyen, Sangshin Kwak
openaire   +4 more sources

Reliability Evaluation of Multi-Mechanism Failure for Semiconductor Devices Using Physics-of-Failure Technique and Maximum Entropy Principle [PDF]

open access: goldIEEE Access, 2020
The physics-of-failure (PoF) technique is a practical approach to evaluate the reliability of semiconductor devices. However, the PoF approaches are usually insufficient in dealing with multi-mechanism failure and fitting the Monte Carlo (MC) sampling ...
Bo Wan, Ye Wang, Yutai Su, Guicui Fu
doaj   +2 more sources

Spline‐Based Drift Analysis for the Reliability of Semiconductor Devices [PDF]

open access: hybridAdvanced Theory and Simulations, 2021
AbstractDesign and production of semiconductor devices for the automotive industry are characterized by high reliability requirements, such that the proper functioning of such devices is ensured over their whole lifetime. Manufacturers subject their products to extensive testing, such as high‐temperature operating life (HTOL) tests that simulate the ...
Vera Hofer   +2 more
openaire   +3 more sources

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices [PDF]

open access: yes, 2013
Preface Part 1: Materials Issues and Reliability of Optical Devices 1. Reliability Testing of Semiconductor Optical Devices 2. Failure Analysis of Semiconductor Optical Devices 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication 4. Reliability and Degradation of III-V Optical Devices Focusing on
Stephen J. Pearton, Osamu Ueda
openaire   +3 more sources

Peanut Defect Identification Based on Multispectral Image and Deep Learning

open access: yesAgronomy, 2023
To achieve the non-destructive detection of peanut defects, a multi-target identification method based on the multispectral system and improved Faster RCNN is proposed in this paper.
Yang Wang   +8 more
doaj   +1 more source

Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy

open access: yesIEEE Journal of the Electron Devices Society, 2021
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system.
Tae Jin Yoo   +7 more
doaj   +1 more source

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