Sputtered 2D transition metal dichalcogenides: from growth to device applications [PDF]
Turk. J. Phys. (2021) 45, 131, 2021 Starting from graphene, 2D layered materials family has been recently set up more than 100 different materials with variety of different class of materials such as semiconductors, metals, semimetals, superconductors. Among these materials, 2D semiconductors have found especial importance in the state of the art device applications compared to that of ...
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Huge out-of-plane piezoelectric response in ferromagnetic monolayer NiClI [PDF]
, 2022 The combination of piezoelectricity and ferromagnetic (FM) order in a two-dimensional (2D) material, namely 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for novel device applications. Here, we predict an in-plane FM semiconductor Janus monolayer NiClI with considerably large magnetic anisotropy energy (MAE) of 1.439 ...
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Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line [PDF]
Solid-State Electronics, 108, 61-66, 2015, 2022 A chip to wafer scale, CMOS compatible method of graphene device fabrication has been established, which can be integrated into the back end of the line (BEOL) of conventional semiconductor process flows. In this paper, we present experimental results of graphene field effect transistors (GFETs) which were fabricated using this wafer scalable method ...
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Room-temperature spin injection and spin-to-charge conversion in a ferromagnetic semiconductor / topological insulator heterostructure [PDF]
arXiv, 2021 Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin
arxiv
Gain in quantum cascade lasers and superlattices: A quantum transport theory [PDF]
Physical Review B 66, 085326 (2002), 2002 Gain in current-driven semiconductor heterostructure devices is calculated within the theory of nonequilibrium Green functions. In order to treat the nonequilibrium distribution self-consistently the full two-time structure of the theory is employed without relying on any sort of Kadanoff-Baym Ansatz.
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Monolithic Infrared Silicon Photonics: The Rise of (Si)GeSn Semiconductors [PDF]
, 2021 (Si)GeSn semiconductors are finally coming of age after a long gestation period. The demonstration of device quality epi-layers and quantum-engineered heterostructures has meant that tunable all-group IV Si-integrated infrared photonics is now a real possibility.
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Ground state determination and band gaps of bilayers of graphenylenes and octafunctionalized-biphenylenes [PDF]
, 2019 Device fabrication often requires materials that are either reliably conducting, reliably semiconducting, or reliably nonconducting. Bilayer graphene (BLG) changes from a superconductor to a semiconductor depending on it's stacking, but because it is difficult to control its stacking, it is not a reliable material for device fabrication.
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Co-planar spin-polarized light emitting diode [PDF]
Appl. Phys. Lett. 88, 091106 (2006), 2005 Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor heterostructures has been used for a reliable spin detection.
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On the Construction of Distribution-Free Prediction Intervals for an Image Regression Problem in Semiconductor Manufacturing [PDF]
arXiv, 2022 The high-volume manufacturing of the next generation of semiconductor devices requires advances in measurement signal analysis. Many in the semiconductor manufacturing community have reservations about the adoption of deep learning; they instead prefer other model-based approaches for some image regression problems, and according to the 2021 IEEE ...
arxiv
Enhanced Carrier Transport by Transition Metal Doping in WS2 Field Effect Transistors [PDF]
, 2020 High contact resistance is one of the primary concerns for electronic device applications of two-dimensional (2D) layered semiconductors. Here, we explore the enhanced carrier transport through metal-semiconductor interfaces in WS2 field effect transistors (FETs) by introducing a typical transition metal, Cu, with two different doping strategies: (i) a
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