Multi-Threshold Corner Detection and Region Matching Algorithm Based on Texture Classification
IEEE Access, 2019 In order to address the unreasonable distributed corners in single threshold Harris detection and expensive computation cost incurred from image region matching performed by normalized cross correlation (NCC) algorithm, multi-threshold corner detection ...
Zetian Tang +6 more
doaj +1 more source
Radiation Pattern Measurement in the Planar Coordinate
IEEE Photonics Journal, 2019 A planar measurement approach is presented to obtain the radiation pattern, by which rotation operations can be removed or reduced for a source with narrow and divergent viewing angle, respectively.
Chen Yang +5 more
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Radiation Risks and Mitigation in Electronic Systems [PDF]
, 2016 Electrical and electronic systems can be disturbed by radiation-induced effects. In some cases, radiation-induced effects are of a low probability and can be ignored; however, radiation effects must be considered when designing systems that have a high ...
Todd, B., Uznanski, S.
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Design of Ellipsoid and Spherical Combined Light Source for Uniform Flux and Color Mixing
IEEE Photonics Journal, 2019 In this letter, an ellipsoid–spherical combined light source structure is presented for the purpose of uniform flux and color mixing, when considering heat dissipation.
Rui-Min Zeng +8 more
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Developing the knowledge-based human resources that support the implementation of the National Dual Training System (NDTS): evaluation of TVET teacher's competency at MARA Training Institutions [PDF]
, 2015 Development in the world of technical and vocational education and training (TVET) on an ongoing basis is a challenge to the profession of the TVET-teachers to maintain their performance.
Ali, Mahazani
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Results in Physics, 2021 For semiconductor device applications such as FinFET, MEMS, 2D materials, and wide bandgap materials, reliability is one of the most powerful key factors for commercialization in the industry. ZnGa2O4 deep ultraviolet (DUV) photodetectors (PDs) have been
Apoorva Sood +6 more
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Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs [PDF]
, 2019 The edge termination design strongly affects the ability of a power device to support the desired voltage and its reliable operation. In this paper we present three appropriate termination designs for 10kV n-IGBTs which achieve the desired blocking ...
, +9 more
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High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates [PDF]
, 2000 The use of polycrystalline SiGe as the gate material for deep submicron CMOS has been investigated. A complete compatibility to standard CMOS processing is demonstrated when polycrystalline Si is substituted with SiGe (for Ge fractions below 0.5) to form
Ponomarev, Youri V. +4 more
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Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations [PDF]
, 2007 This paper investigates the validity of the parabolic effective mass approximation (EMA), which is almost universally used to describe the size and bias-induced quantization in n-MOSFETs.
Esseni, David +4 more
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Active power losses distribution methods for the modular multilevel converter [PDF]
, 2016 Modular Converters such as the MMC have become the new standard in VSC-HVDC applications. Their modularity has brought many industrial advantages but also increased the complexity of their operation.
Merlin, MMC, Mitcheson, PD
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