Results 51 to 60 of about 161,989 (332)

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

Advanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo, Mohamad Insan Nugraha, Hendrik Faber, Shaoxian Li, Chrysa Aivalioti, Bahaaeddin Irziqat, Ricardo Ruvalcaba, Temur Maksudov, Yu‐ying Yang, Harold F. MazoMantilla, Lazaros Panagiotidis, Mohamed Nejib Hedhili, Furkan H. Isikgor, Leonidas Tsetseris, Shadi Fatayer, Martin Heeney, Thomas D. Anthopoulos   +16 more
wiley   +1 more source

Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT

Journal of Information Display
Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important to ...
Hye-Jin Oh, Yoon-Seo Kim, Hyun-Jun Jeong, Sunhee Lee, Joon Seok Park, Jin-Seong Park   +5 more
doaj   +1 more source

Performance enhancement of ZnGa2O4 Schottky type deep-ultraviolet photodetectors by oxygen supercritical fluid treatment

Results in Physics, 2021
For semiconductor device applications such as FinFET, MEMS, 2D materials, and wide bandgap materials, reliability is one of the most powerful key factors for commercialization in the industry. ZnGa2O4 deep ultraviolet (DUV) photodetectors (PDs) have been
Apoorva Sood, Fow-Gow Tarntair, Yu-Xuan Wang, Ting-Chang Chang, Yu-Hsuan Chen, Po-Liang Liu, Ray-Hua Horng   +6 more
doaj  

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Advanced Functional Materials, EarlyView.
A materials and device design concept that comprises a self‐assembled ultra‐thin epitaxial ion‐transporting layer, an amorphous oxide overcoat oxygen‐blocking layer, and a partial filament formed during an electroforming step is proposed for low‐current multilevel resistive switching devices.
Ming Xiao, Markus Hellenbrand, Nives Strkalj, Babak Bakhit, Zhuotong Sun, Nikolaos Barmpatsalos, Dovydas Joksas, Hongyi Dou, Zedong Hu, Ping Lu, Samip Karki, Sundar Kunwar, Jonathan D. Major, Aiping Chen, Haiyan Wang, Quanxi Jia, Adnan Mehonic, Judith L. MacManus‐Driscoll   +17 more
wiley   +1 more source

Patterning solution-processed organic single-crystal transistors with high device performance

AIP Advances, 2011
We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition.
Yun Li, Chuan Liu, Akichika Kumatani, Peter Darmawan, Takeo Minari, Kazuhito Tsukagoshi   +5 more
doaj   +1 more source

Selective Reduction Laser Sintering: A New Strategy for NO2 Gas Detection Based on In2O3 Nanoparticles

Advanced Functional Materials, EarlyView.
This research utilizes selective reduction laser sintering (SRLS) to engineer In2O3 NPs for flexible NO2 sensors. The introduction of oxygen vacancy defects enhances sensor performance, offering excellent responsiveness, rapid response/recovery, superior selectivity, low detection limit, and long‐term stability.
Shaogang Wang, Chunjian Tan, Qihang Zong, Shizhen Li, Chenshan Gao, Huiru Yang, Qianming Huang, Paddy French, Huaiyu Ye   +8 more
wiley   +1 more source

A remaining useful life prediction method of SiC MOSFET considering failure threshold uncertainty

IET Power Electronics
Different methods have been developed to predict power devices' remaining useful life (RUL). The existing methods need to specify the failure thresholds corresponding to failure precursors of power devices based on historical data.
Qunfang Wu, Boyuan Xu, Lan Xiao, Qin Wang   +3 more
doaj   +1 more source

Performance analysis of Arithmetic Mean method in determining peak junction temperature of semiconductor device

Ain Shams Engineering Journal, 2015
High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life.
Mohana Sundaram Muthuvalu, Vijanth Sagayan Asirvadam, Guwanch Mashadov   +2 more
doaj   +1 more source

Exploiting Semiconductor Properties for Hardware Trojans [PDF]

arXiv, 2009
This paper discusses the possible introduction of hidden reliability defects during CMOS foundry fabrication processes that may lead to accelerated wearout of the devices. These hidden defects or hardware Trojans can be created by deviation from foundry design rules and processing parameters.
arxiv  

Harnessing Outer Space for Improved Electrocaloric Cooling

Advanced Functional Materials, EarlyView.
A novel radiative heat sink/source‐integrated electrocaloric (R‐iEC) system combines the electrocaloric (EC) effect with a thermally conductive radiative cooler (TCRC) to address heat dissipation limitations in EC devices. Utilizing outer space as a heat sink, the system achieves up to 240 W m−2 of heat dissipation performance, making it highly ...
Dong Hyun Seo, Hyung Rae Kim, Joo Ho Yun, Hyunkyu Kwak, Do Hyeon Kim, Se‐Yeon Heo, Rujun Ma, Gil Ju Lee, Young Min Song   +8 more
wiley   +1 more source