Results 61 to 70 of about 86,576 (325)

Synchrotron Radiation for Quantum Technology

Advanced Functional Materials, EarlyView.
Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader, Sakura Pascarelli, Klaus Attenkofer, Anna A. Makarova, Karsten Holldack, Kai Rossnagel, Kristiaan Temst, George Kourousias, Stefano Carretta, Caterina Biscari, Helmut Dosch   +10 more
wiley   +1 more source

Reliability assessment of high-power GaN-HEMT devices with different buffers under influence of gate bias and high-temperature tests

Applied Physics Express
This study compares Vth-instability in D-mode MIS-HEMT devices between two epitaxial layers, AlN/AlGaN/GaN superlattice-W1, and three-step graded AlGaN-W2.
Shivendra K. Rathaur, Le Trung Hieu, Abhisek Dixit, Edward Yi Chang   +3 more
doaj   +1 more source

Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs

, 2010
In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs.
Bersuker, Gennadi, Bijesh, R., Deora, Shweta, Huang, Jeff, Jammy, Raj, Klimeck, Gerhard, Krisch, P. D., Paul, Abhijeet   +7 more
core   +1 more source

Atomic Size Misfit for Electrocatalytic Small Molecule Activation

Advanced Functional Materials, EarlyView.
This review explores the application and mechanisms of atomic size misfit in catalysis for small molecule activation, focusing on how structural defects and electronic properties can effectively lower the energy barriers of chemical bonds in molecules like H2O, CO2, and N2.
Ping Hong, Changfan Xu, Huaping Zhao, Yong Lei   +3 more
wiley   +1 more source

Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module

Electronics Letters, 2023
The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper.
Surya Elangovan, Stone Cheng, Wen‐Yea Jang, Edward Yi Chang   +3 more
doaj   +1 more source

Hysteresis in As-Synthesized MoS₂ Transistors: Origin and Sensing Perspectives

Micromachines, 2021
Two-dimensional materials, including molybdenum disulfide (MoS2), present promising sensing and detecting capabilities thanks to their extreme sensitivity to changes in the environment.
Carlos Marquez, Norberto Salazar, Farzan Gity, Jose C. Galdon, Carlos Navarro, Carlos Sampedro, Paul K. Hurley, Edward Yi Chang, Francisco Gamiz   +8 more
doaj   +1 more source

Does a Nanowire Transistor Follow the Golden Ratio? A 2D Poisson-Schrödinger/3D Monte Carlo Simulation Study [PDF]

, 2017
In this work, we observed the signatures of isotropic charge distributions showing the same attributes as the golden ratio (Phi) described in art and architecture, we also present a simulation study of ultra-scaled n-type silicon nanowire transistors ...
Adamu-Lema, Fikru, Al-Ameri, Talib, Asenov, Asen, Georgiev, V.P.   +3 more
core   +1 more source

Copper‐based Materials for Photo and Electrocatalytic Process: Advancing Renewable Energy and Environmental Applications

Advanced Functional Materials, EarlyView.
Cu‐based catalysts as a cornerstone in advancing sustainable energy technologies are fully reviewed in this manuscript, highlighting their potential in photo‐ and electrocatalysis. It includes metallic copper, copper oxides, copper sulfides, copper halide perovskites, copper‐based metal–organic frameworks (MOFs), and covalent organic frameworks (COFs),
Jéssica C. de Almeida, Yanjie Wang, Thais A. Rodrigues, Paulo H. H. Nunes, Vagner R. de Mendonça, Paulo H. E. Falsetti, Leticia V. Savazi, Tao He, Alexandra V. Bardakova, Aida V. Rudakova, Jie Tian, Alexei V. Emeline, Osmando F. Lopes, Antonio Otavio T. Patrocínio, Jia Hong Pan, Caue Ribeiro, Detlef W. Bahnemann   +16 more
wiley   +1 more source

First-principles design of MSi2N4/WSi2N4 (M = Ti, Zr, Hf): Structural stability, thermal, electronic and optical properties

Results in Physics
The family of two-dimensional MA2Z4 heterostructures has received increasing attention in recent years. To investigate the structural stability, electrical structure, optical characteristics, and thermal properties (M = Ti, Zr, and Hf) of MSi2N4/WSi2N4 ...
Guang Wang, Mengya Huang, Zhao Ding, Xiang Guo, Zhengli Zhang, Xuefei Liu, Yi Wang   +6 more
doaj   +1 more source

An Advanced Three-Level Active Neutral-Point-Clamped Converter With Improved Fault-Tolerant Capabilities [PDF]

, 2017
A resilient fault-tolerant silicon carbide (SiC) three-level power converter topology is introduced based on the traditional active neutral-point-clamped converter.
He, Jiangbiao, Katebi, Ramin, Weise, Nathan   +2 more
core   +1 more source