Results 71 to 80 of about 86,576 (325)

Analysis of Chromatic Aberration Effects in Triple-Junction Solar Cells Using Advanced Distributed Models [PDF]

, 2011
The consideration of real operating conditions for the design and optimization of a multijunction solar cell receiver-concentrator assembly is indispensable.
Algora del Valle, Carlos, Espinet González, Pilar, García Vara, Iván, Rey-Stolle Prado, Ignacio   +3 more
core   +2 more sources

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFT

Journal of Information Display
Oxide semiconductor-based thin-film transistors (TFTs) are promising candidates for display backplanes and memory device applications. To achieve high device performance and sustain the electrical properties under prolonged operation, it is important to ...
Hye-Jin Oh, Yoon-Seo Kim, Hyun-Jun Jeong, Sunhee Lee, Joon Seok Park, Jin-Seong Park   +5 more
doaj   +1 more source

Suppression of stacking-fault expansion in 4H-SiC PiN diodes using proton implantation to solve bipolar degradation

Scientific Reports, 2022
4H-SiC has been commercialized as a material for power semiconductor devices. However, the long-term reliability of 4H-SiC devices is a barrier to their widespread application, and the most important reliability issue in 4H-SiC devices is bipolar ...
Masashi Kato, Ohga Watanabe, Toshiki Mii, Hitoshi Sakane, Shunta Harada   +4 more
doaj   +1 more source

2D Multifunctional Spin‐Orbit Coupled Dirac Nodal Line Materials

Advanced Functional Materials, EarlyView.
A total of 473 nonmagnetic and antiferromagnetic 2D spin‐orbit coupled Dirac nodal line materials are screened, spanning 5 layer groups and 12 magnetic space groups. Furthermore, it integrates their topological properties with electride, multiferroic, and magnetic characteristics, revealing unique systems with expanded functionalities and promising ...
Weizhen Meng, Ying Liu, Jialin Gong, Yalong Jiao, Xiaoming Zhang, Wenxian Li, Zhenxiang Cheng, Tie Yang   +7 more
wiley   +1 more source

The reliability of the power semiconductor module on the operating temperature

MATEC Web of Conferences, 2014
A comparison of the intensities of the failure of a power unit with the real thermal regime of the device under conditions of natural convection and obtained by using statistical data analysis.
Kravchenko Evgeny V., Ivleva Dariya Yu.
doaj   +1 more source

Soft-switching SiC power electronic conversion for distributed energy resources and storage applications

Journal of Modern Power Systems and Clean Energy, 2019
Power electronic conversion plays an important role in flexible AC or DC transmission and distribution systems, integration of renewable energy resources, and energy storage systems to enhance efficiency, controllability, stability, and reliability of ...
Keyan Shi, Jinyi Deng, An Zhao, Dehong Xu   +3 more
doaj   +1 more source

Research on Test Method of Ignition Temperature of Electric Explosive Device under Electromagnetic Pulse [PDF]

Radioengineering, 2021
The safety and reliability of electric explosive device, as the most sensitive initiating energy for igniting powder and explosive, directly impact those of weapon system. The safety and reliability of the electric explosion device were determined by the
B. Wang, Y. W. Sun, G. G. Wei, X. T. Wang, H. M. Gao   +4 more
doaj  

Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

Nano Convergence, 2023
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as
Jaewook Lee, Kun Yang, Ju Young Kwon, Ji Eun Kim, Dong In Han, Dong Hyun Lee, Jung Ho Yoon, Min Hyuk Park   +7 more
doaj   +1 more source

Prospects of Electric Field Control in Perpendicular Magnetic Tunnel Junctions and Emerging 2D Spintronics for Ultralow Energy Memory and Logic Devices

Advanced Functional Materials, EarlyView.
Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp, Brahmdutta Dixit, Yifei Yang, Deyuan Lyu, Thomas Peterson, Qi Jia, Yu‐Chia Chen, Jian‐Ping Wang   +7 more
wiley   +1 more source