Results 81 to 90 of about 86,576 (325)
A remaining useful life prediction method of SiC MOSFET considering failure threshold uncertainty
IET Power ElectronicsDifferent methods have been developed to predict power devices' remaining useful life (RUL). The existing methods need to specify the failure thresholds corresponding to failure precursors of power devices based on historical data.
Qunfang Wu +3 more
doaj +1 more source
Advanced Functional Materials, EarlyView.The chemical composition and band alignment are systematically investigated at the TiO2/InP heterointerface. Thin TiO2 films are deposited by ALD on atomically ordered, P‐terminated p‐InP(100). By combining UPS, XPS, and ab initio molecular dynamics, the atomistic structure and electronic alignment are revealed.
Mohammad Amin Zare Pour +11 more
wiley +1 more source
Patterning solution-processed organic single-crystal transistors with high device performance
AIP Advances, 2011 We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition.
Yun Li +5 more
doaj +1 more source
Method of examining microcircuit patterns [PDF]
, 1986 Examination of microstructures of LSI and VLSI devices is facilitated by employing a method in which the device is photographed through a darkfield illumination optical microscope and the resulting negative subjected to inverse processing to form a ...
Suszko, S. F.
core +1 more source
Advanced Functional Materials, EarlyView.By integrating machine learning into flux‐regulated crystallization (FRC), accurate prediction of solvent evaporation rates in real time, improving crystallization control and reducing crystal growth variability by over threefold, is achieved. This enhances the reproducibility and quality of perovskite single crystals, leading to reproducible ...
Tatiane Pretto +8 more
wiley +1 more source
X-ray topographic study of defects in Si-based multilayer epitaxial power devices
Modern Electronic Materials, 2016 Silicon based multilayered epitaxial structures are currently the main material for large-scale commercial fabrication of generally used power semiconductor devices such as fast recovery epitaxial diodes (FRED), isolate gate bipolar transistor (IGBT ...
Iren L. Shul'pina, Vladimir A. Kozlov
doaj +1 more source
An improved method for obtaining a normalized junction temperature for semiconductors: A concept [PDF]
, 1973 Failure rate for given semiconductor device is simply determined by reading value of normalized junction temperature from printout for any given combination of ambient temperature, stress ratio, and maximum rated junction temperature, and obtaining ...
Trivedi, S. N.
core +1 more source
Thermal profiles within the channel of planar gunn diodes using micro-particle sensors [PDF]
, 2017 The paper describes the use of a novel microparticle sensor (~3 μm diameter) and infra-red (IR) microscopy to measure the temperature profile within the active channel (typically 3 μm length and 120 μm width) of planar Gunn diodes. The method has enabled
Bajo, Miguel Montes +6 more
core +2 more sources
Advanced Functional Materials, EarlyView.[001]‐oriented Sb2Se3 film with improved crystallinity and adjusted composition is achieved via a new thermal treatment approach consisting of preliminary annealing of the Sb layer before its selenization. The findings of this work demonstrate enhanced charge carriers' transportation, a stable performance, and an improvement of H2 generation from ...
Magno B. Costa +7 more
wiley +1 more source
Ain Shams Engineering Journal, 2015 High reliability users of microelectronic devices have been derating junction temperature and other critical stress parameters to improve device reliability and extend operating life.
Mohana Sundaram Muthuvalu +2 more
doaj +1 more source