Results 231 to 240 of about 14,706 (300)

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2

Small, EarlyView.
The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid, Aashi Gupta, Pavlina Metaxa, A Arifutzzaman, Hariprasad Kuduvan, Rahil Haria, Michele Conroy, Ian Campbell, Ageeth A Bol, James Connolly, Jun Lin, Ian Povey, Ray Duffy, Gerard M O'Connor   +13 more
wiley   +1 more source

Asymmetric Diffusion Metasurface-Based Lensless Monitoring and Uniform Illumination Systems for Optical Lithography. [PDF]

Research (Wash D C)
Wang G, Shen Y, Pi Y, Kong W, Lai Y, Ma X, Zhou Y, Li F, Cao Z, Wang L, Yu S.   +10 more
europepmc   +1 more source

Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices

Small, EarlyView.
The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis, Filimon Zacharatos, Avraham Twitto, Michal Poplinger, Adi Levi, Amaia Pesquera, Amaia Zurutuza, Iakovos Kritikos, Stefania Skorda, Alexandros El Sachat, Yuri Mikhlin, Doron Naveh, Ioanna Zergioti   +12 more
wiley   +1 more source

Virtualization as a New Scaling Law for Semiconductor Devices Beyond Geometric Scaling. [PDF]

Small
Wang Z, Chen X, Lin F, Li X, Wang F, Guo S, Yu S, Li L, Huang JK.   +8 more
europepmc   +1 more source

Unified Steep‐Slope Switching and Non‐Volatile Memory in a Complementarily Stabilized van der Waals Ferroelectric Transistor

Small, EarlyView.
We present a van der Waals FeNC‐FET that simultaneously achieves sub‐60 mV/dec steep switching and non‐volatile memory within a single transistor. A CIPS/h‐BN/α‐In2Se3 bi‐ferroelectric gate stack enables a stabilized negative‐capacitance state in FE1 while maintaining the bistable polarization of FE2.
Sangmin Lee, Stanislav Sin, Cheolhwa Jang, Seongkweon Kang, Saeroonter Oh, Sungjoo Lee   +5 more
wiley   +1 more source

The Principle and Development of Optical Maskless Lithography Based Digital Micromirror Device (DMD). [PDF]

Micromachines (Basel)
Li X, Cui G, Xu G.
europepmc   +1 more source

Virtual Overlay Staining With Plasmonic Oligomer Metasurface

Small, EarlyView.
A scalable plasmonic metasurface enables “virtual staining” of living cells by enhancing optical contrast from refractive index differences. Through electrostatically assembled nanoparticle oligomers on a mirror, cellular components such as nuclei, mitochondria, and lipid‐rich regions are visualized without molecular dyes. This approach simplifies cell
Doeun Kim, Juhwan Kim, Jiyeong Ma, Gyurin Kim, JuHyeong Lee, So Young Yoon, Youngsoo Jun, Young Min Song, Hyeon‐Ho Jeong   +8 more
wiley   +1 more source

Fabrication of Silicon Monolithic Tubes with High-Aspect-Ratio Cavities Using Langmuir-Blodgett Colloidal Lithography and Bayesian-Optimized Continuous Plasma Etching. [PDF]

ACS Omega
Osipov A, Fumina A, Belyanov I, Speshilova A, Endiiarova E, Gerdt A.   +5 more
europepmc   +1 more source

Data‐driven elemental descriptors for rational design of high‐sensitivity extreme ultraviolet photoresists

Smart Molecules, EarlyView.
Data‐driven descriptors indicate that elements such as I, Te, In, Sn, Sb, Cs and Bi have positive impact on EUV sensitivity in photoresists, whereas elements like C and H exhibit negative contributions. Abstract The rational design of high‐sensitivity photoresists for extreme ultraviolet (EUV) lithography is hindered by the lack of quantitative ...
Jiyuan Liu, Jialiang Wei, Huie Zhu, Xiaojun Peng   +3 more
wiley   +1 more source

Polarity‐engineered Sn‐Ti cluster photoresists for sub‐10‐nm high‐resolution lithography

Smart Molecules, EarlyView.
Enhancing the polarity of clusters can optimize their patterning performance; inspired by this strategy, we designed polarity‐enhanced Sn‐Ti oxo clusters via ligand engineering. The optimal TS‐3 with exposure‐induced polarity switch achieves 8 nm patterning in lithography and achieves simultaneous improvement in resolution and patterning performance ...
Daohan Wang, Runfeng Xu, Min Zhang, Xiaofeng Gong, Wenzheng Li, Danhong Zhou, Jun Zhao, Huie Zhu, Zhan Lu, Pengzhong Chen, Xiaojun Peng   +10 more
wiley   +1 more source