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Optical metrology of semiconductor wafers in lithography
SPIE Proceedings, 2013This paper presents a concise description of 3 optical measurement systems that play a critical role in optical lithography of semiconductor devices. A level sensor and alignment sensor are described that are used to measure, respectively, wafer height variations and the wafer location prior to resist exposure.
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Metal oxide resist formulation and process advancements towards high-NA EUV lithography
Advanced LithographyMetal Oxide Resists (MOR) are uniquely suited to single-patterning EUV lithography in current high-volume manufacturing and for next generation high-NA applications.
Amrit K. Narasimhan +10 more
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Diagnostics and lithography of semiconductor structures for nanoelectronics
Nanotechnologies in Russia, 2008A complex of metrological, diagnostic, and technological support of investigations and innovations in the field of nanotechnologies based on the Nanostructures joint service center is presented. Results of the study of the atomic structure of the surface, interfaces, and structural defects in semiconductor materials; the development of modern electron ...
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Advanced lithography materials: From fundamentals to applications.
Advances in Colloid and Interface ScienceThe semiconductor industry has long been driven by advances in a nanofabrication technology known as lithography, and the fabrication of nanostructures on chips relies on an important coating, the photoresist layer. Photoresists are typically spin-coated
Yanhui Zhang +8 more
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Advancing semiconductor patterning with EUV hyper NA: opportunities and challenges
Advanced LithographyEnhanced chip performance and miniaturization in the semiconductor industry are driven by improved lithographic capabilities, such as those of lithography systems with larger Numerical Aperture (NA).
G. Bottiglieri +10 more
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Semiconductor-, Lithography-, and Electrically-Related Applications
1999Electron-beam (e-beam) lithography has over the past 15 years or so taken a predominant role in Si wafer patterning in the semiconductor industry due to its sub-micron (and potential nano-scale) resolution. This high resolution and the accurate focussing of e-beams is however limited by charging which occurs in the photo-resist: a trapping of charge ...
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Using Destructive Optical Interference in Semiconductor Lithography
Optics and Photonics News, 2006Integrated circuits—one of the greatest inventions of the last half of the 20th century—are still made using photolithography, even though their dimensions are now well below the exposure wavelength. Carefully tailored destructive interference is what makes it possible.
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New prospects for electron beams as tools for semiconductor lithography
Scanning Microscopies, 2009H. C. Pfeiffer
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A review of nanoimprint lithography for high-volume semiconductor device manufacturing
, 2017D. Resnick, Jin Choi
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