Results 21 to 30 of about 11,779 (261)

Lithography reticle scheduling in semiconductor manufacturing

Engineering Optimization, 2023
The lithography process in semiconductor dynamic random-access memory (DRAM) fabrication plants (fabs) is usually a major bottleneck, and reticle scheduling is complicated by process-specific constraints such as diversity of the product mix and rapidly changing deadlines.
Lee, Chia-Yen, Wu, Cheng-Man, Hsu, Chia-Yi, Xie, Hui-Hua, Fang, Yu-Hsueh   +4 more
openaire   +1 more source

Structural Evolution of the Global Lithography Equipment Trade Network: Implications for Smart-City Supply-Chain Resilience

Applied Sciences
Smart cities increasingly depend on chip-centered digital infrastructure, whose resilience is closely linked to the stability of upstream semiconductor manufacturing equipment supply.
Li Yu, Mengna Huang, Daichao Li, Xinxin Li, Lin Yang   +4 more
doaj   +1 more source

Optimum Adjustment for Distortion in Semiconductor Lithography Equipment

Journal of Advanced Mechanical Design, Systems, and Manufacturing, 2008
In this paper, we consider the problem of lens distortion adjustment of semiconductor lithography equipment. The objective of adjustment is to minimize the maximum absolute value of distortion.
Youzou FUKAGAWA, Yuji SHINANO, Mario NAKAMORI   +2 more
doaj   +1 more source

Seedless-electroplating Process Development for Micro-features Realization

International Journal of Technology, 2015
This study aims to combine the seedless-electroplating process with maskless-lithography, as an alternative for Lithografie, Galvanoformung, Abformung (LIGA) or Lithography, Electroplating and Molding with a normal, simpler, and cheaper semiconductor ...
Yudan Whulanza, Tito Sitanggang, Jos Istiyanto, Sugeng Supriadi   +3 more
doaj   +1 more source

Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography

Advanced Materials Interfaces, 2023
Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges.
Ashwanth Subramanian, Nikhil Tiwale, Won‐Il Lee, Kim Kisslinger, Ming Lu, Aaron Stein, Jiyoung Kim, Chang‐Yong Nam   +7 more
doaj   +1 more source

Ion beam induced current analysis in GaN microwires [PDF]

EPJ Web of Conferences, 2020
GaN is a wide bandgap semiconductor which is expected to withstand high radiation doses. Consequently, it is considered a promising material for new generation particle detectors in radiation related applications.
Verheij Dirkjan, Peres Marco, Cardoso Susana, Alves Luís Cerqueira, Alves Eduardo, Durand Cristophe, Eymery Joël, Fernandes Jorge, Lorenz Katharina   +8 more
doaj   +1 more source

Direct Lithography for Regulating Multiple Properties of Organic Semiconductors via Photo‐Crosslinkers

Macromolecular Materials and Engineering
Photo‐crosslinkers, as materials with negative photoresist characteristics, are applied in the direct lithography process of organic semiconductor devices.
Yueping Lai, Liang‐Wen Feng
doaj   +1 more source

Demonstration of ACO-Based Freeform Source for ArF Laser Immersion Lithography System

IEEE Access, 2017
This paper describes the use of ArF immersion lithography to verify the feasibility of a self-developed freeform illumination source that exposes features on masks and forms resist patterns.
Frederick Lie, Chao-Yi Huang, Chun-Sheng Wu, Kao-Tun Chen, Hung-Fei Kuo   +4 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source