Results 21 to 30 of about 11,186 (164)
Nanosphere Lithography for Nitride Semiconductors
Ch ...
Choi, HW, Fu, WY
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Innovation on Line Cut Methods of Self-aligned Multiple Patterning
Self-aligned multiple patterning (SAMP) can enable the semiconductor scaling before EUV lithography becomes mature for industry use. Theoretically any small size of pitch can be achieved by repeating SADP on same wafer but with challenges of pitch ...
Jeff Shu
doaj +1 more source
Seedless-electroplating Process Development for Micro-features Realization
This study aims to combine the seedless-electroplating process with maskless-lithography, as an alternative for Lithografie, Galvanoformung, Abformung (LIGA) or Lithography, Electroplating and Molding with a normal, simpler, and cheaper semiconductor ...
Yudan Whulanza +3 more
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Lensless metrology for semiconductor lithography at EUV [PDF]
The production of modern semiconductor devices is based on photolithography, a process through which a pattern engraved on a mask is projected on a silicon wafer coated with a photosensitive material. In the past few decades, continuous technological progress in this field allowed the industry to follow Moore’s law by reducing the size of the printed ...
Iacopo Mochi +8 more
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Optimum Adjustment for Distortion in Semiconductor Lithography Equipment
In this paper, we consider the problem of lens distortion adjustment of semiconductor lithography equipment. The objective of adjustment is to minimize the maximum absolute value of distortion.
Youzou FUKAGAWA +2 more
doaj +1 more source
Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges.
Ashwanth Subramanian +7 more
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Smart cities increasingly depend on chip-centered digital infrastructure, whose resilience is closely linked to the stability of upstream semiconductor manufacturing equipment supply.
Li Yu +4 more
doaj +1 more source
Ion beam induced current analysis in GaN microwires [PDF]
GaN is a wide bandgap semiconductor which is expected to withstand high radiation doses. Consequently, it is considered a promising material for new generation particle detectors in radiation related applications.
Verheij Dirkjan +8 more
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Lithography reticle scheduling in semiconductor manufacturing
The lithography process in semiconductor dynamic random-access memory (DRAM) fabrication plants (fabs) is usually a major bottleneck, and reticle scheduling is complicated by process-specific constraints such as diversity of the product mix and rapidly changing deadlines.
Lee, Chia-Yen +4 more
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Demonstration of ACO-Based Freeform Source for ArF Laser Immersion Lithography System
This paper describes the use of ArF immersion lithography to verify the feasibility of a self-developed freeform illumination source that exposes features on masks and forms resist patterns.
Frederick Lie +4 more
doaj +1 more source

