Results 31 to 40 of about 11,186 (164)

Direct Lithography for Regulating Multiple Properties of Organic Semiconductors via Photo‐Crosslinkers

Macromolecular Materials and Engineering
Photo‐crosslinkers, as materials with negative photoresist characteristics, are applied in the direct lithography process of organic semiconductor devices.
Yueping Lai, Liang‐Wen Feng
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Optimization of Lens Adjustment in Semiconductor Lithography Equipment Using Quadratically Constrained and Second-Order Cone Programming

Journal of Advanced Mechanical Design, Systems, and Manufacturing, 2010
The present paper considers optimization of lens adjustment in semiconductor lithography equipment. For improving productivity, the laser irradiation power of recent semiconductor lithography equipment has been boosted, which causes significant ...
Yuji SHINANO, Toshiyuki YOSHIHARA, Ryuhei MIYASHIRO, Youzou FUKAGAWA   +3 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Ultra-high precision nano additive manufacturing of metal oxide semiconductors via multi-photon lithography

Nature Communications
As a basic component of the versatile semiconductor devices, metal oxides play a critical role in modern electronic information industry. However, ultra-high precision nanopatterning of metal oxides often involves multi-step lithography and transfer ...
Chun Cao, Xianmeng Xia, Xiaoming Shen, Xiaobing Wang, Zhenyao Yang, Qiulan Liu, Chenliang Ding, Dazhao Zhu, Cuifang Kuang, Xu Liu   +9 more
doaj   +1 more source

Ultra-Thin and Lithography-Free Transmissive Color Filter Based on Doped Indium Gallium Zinc Oxide with High Performance

Micromachines, 2022
A kind of ultra-thin transmissive color filter based on a metal-semiconductor-metal (MSM) structure is proposed. The displayed color can cover the entire visible range and switches after H2 treatment. An indium gallium zinc oxide (IGZO) semiconductor was
Xiangrui Fan, Shengyao Wang, Dongdong Xu, Gaige Zheng   +3 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Optimizing Movement Sequences for Step-and-Scan Lithography Equipment

Journal of Advanced Mechanical Design, Systems, and Manufacturing, 2013
The purpose of this work is to improve the throughput of step-and-scan lithography equipment to shorten the production time of a wafer. For this purpose, we propose a method for solving the MSOP (Movement Sequence Optimization Problem), which is the ...
Yuji SHINANO, Nobuo INUI, Youzou FUKAGAWA, Noburu TAKAKURA   +3 more
doaj   +1 more source

Friction-Induced Nanofabrication: A Review

Chinese Journal of Mechanical Engineering, 2021
As the bridge between basic principles and applications of nanotechnology, nanofabrication methods play significant role in supporting the development of nanoscale science and engineering, which is changing and improving the production and lifestyle of ...
Bingjun Yu, Linmao Qian
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source