Results 31 to 40 of about 14,706 (300)

Optimum Adjustment for Distortion in Semiconductor Lithography Equipment

open access: yesJournal of Advanced Mechanical Design, Systems, and Manufacturing, 2008
In this paper, we consider the problem of lens distortion adjustment of semiconductor lithography equipment. The objective of adjustment is to minimize the maximum absolute value of distortion.
Youzou FUKAGAWA   +2 more
doaj   +1 more source

Seedless-electroplating Process Development for Micro-features Realization

open access: yesInternational Journal of Technology, 2015
This study aims to combine the seedless-electroplating process with maskless-lithography, as an alternative for Lithografie, Galvanoformung, Abformung (LIGA) or Lithography, Electroplating and Molding with a normal, simpler, and cheaper semiconductor ...
Yudan Whulanza   +3 more
doaj   +1 more source

Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography

open access: yesAdvanced Materials Interfaces, 2023
Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges.
Ashwanth Subramanian   +7 more
doaj   +1 more source

Lithography reticle scheduling in semiconductor manufacturing

open access: yesEngineering Optimization, 2023
The lithography process in semiconductor dynamic random-access memory (DRAM) fabrication plants (fabs) is usually a major bottleneck, and reticle scheduling is complicated by process-specific constraints such as diversity of the product mix and rapidly changing deadlines.
Lee, Chia-Yen   +4 more
openaire   +1 more source

Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wells

open access: yes, 2021
International audienceBuilding two-dimensional lattices in semiconductor quantum-wells offers the prospect to design distinct energy-momentum dispersions, including conical intersections and nondispersive bands.
T.S. Kulmala   +27 more
core   +1 more source

Ion beam induced current analysis in GaN microwires [PDF]

open access: yesEPJ Web of Conferences, 2020
GaN is a wide bandgap semiconductor which is expected to withstand high radiation doses. Consequently, it is considered a promising material for new generation particle detectors in radiation related applications.
Verheij Dirkjan   +8 more
doaj   +1 more source

Demonstration of ACO-Based Freeform Source for ArF Laser Immersion Lithography System

open access: yesIEEE Access, 2017
This paper describes the use of ArF immersion lithography to verify the feasibility of a self-developed freeform illumination source that exposes features on masks and forms resist patterns.
Frederick Lie   +4 more
doaj   +1 more source

FIRM: a new software tool for calibration of lithography simulation

open access: yes, 2022
S.161-173In general, simulation requires a thorough understanding of the physics and/or chemistry of the processes. This should lend itself to models which can be used to establish simulation software.
Feike, A.   +5 more
core  

Direct Lithography for Regulating Multiple Properties of Organic Semiconductors via Photo‐Crosslinkers

open access: yesMacromolecular Materials and Engineering
Photo‐crosslinkers, as materials with negative photoresist characteristics, are applied in the direct lithography process of organic semiconductor devices.
Yueping Lai, Liang‐Wen Feng
doaj   +1 more source

Optimization of Lens Adjustment in Semiconductor Lithography Equipment Using Quadratically Constrained and Second-Order Cone Programming

open access: yesJournal of Advanced Mechanical Design, Systems, and Manufacturing, 2010
The present paper considers optimization of lens adjustment in semiconductor lithography equipment. For improving productivity, the laser irradiation power of recent semiconductor lithography equipment has been boosted, which causes significant ...
Yuji SHINANO   +3 more
doaj   +1 more source

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