Results 51 to 60 of about 11,779 (261)

Self‐Powered, Ultra‐Sensitive InGaAs/ITO Nanowire Radial Junction Infrared Photodiode for Low Flux Imaging at Room Temperature

Advanced Functional Materials, EarlyView.
This study reports a self‐powered InGaAs nanowire photodetector achieving single‐photon‐level sensitivity in the shortwave infrared at non‐cryogenic temperatures. The device demonstrates high‐speed imaging capabilities even under extremely low‐flux conditions.
Kosala Dhanawansha, Chaohao Chen, Zhe Li, Tuomas Haggren, Dawei Liu, Yang Yu, Baolei Liu, Sanjay Krishna, Hark H. Tan, Chennupati Jagadish, Lan Fu   +10 more
wiley   +1 more source

Multidimensional‐Encoded High‐Fidelity Spectrometers With a Floating‐Base Bipolar Junction

Advanced Functional Materials, EarlyView.
A floating‐base bipolar junction photodetector enables multidimensional spectral encoding through synergistic gate‐ and drain‐bias modulation of interfacial barrier matching. The resulting complementary spectral responses form a diverse, weakly correlated response matrix, enabling robust and high‐fidelity spectral reconstruction even at sub‐nanoampere ...
Sang‐Hyeon Lee, Junho Min, Yonas Tsegaye Megra, Min‐Hye Jeong, Hwi Je Woo, Jaewon Han, Junheon Ha, Gyunghyun Jang, Young Jae Song, Hyun‐Soo Ra, Hoon Hahn Yoon, Jong‐Soo Lee   +11 more
wiley   +1 more source

Advancements and challenges in inverse lithography technology: a review of artificial intelligence-based approaches

Light: Science & Applications
Inverse lithography technology (ILT) is a promising approach in computational lithography to address the challenges posed by shrinking semiconductor device dimensions.
Yixin Yang, Kexuan Liu, Yunhui Gao, Chen Wang, Liangcai Cao   +4 more
doaj   +1 more source

Electrically driven deep ultraviolet MgZnO lasers at room temperature

Scientific Reports, 2017
Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays.
Mohammad Suja, Sunayna Binte Bashar, Bishwajit Debnath, Longxing Su, Wenhao Shi, Roger Lake, Jianlin Liu   +6 more
doaj   +1 more source

Hotspot Detection of Semiconductor Lithography Circuits Based on Convolutional Neural Network

Journal of Microelectronic Manufacturing, 2018
In the advanced semiconductor lithography manufacturing process, the sub-wavelength lithography gap may cause lithographic error and the difference between the wafer pattern and mask pattern which may cause wafer defects in the later process.
Xingyu Zhou, Youling Yu
doaj   +1 more source

Advanced lithography for compound semiconductor applications

III-Vs Review, 2002
AbstractThis paper focuses on state-of-the-art lithography technology for advanced applications in compound semiconductor material processing. The need for thinned substrate materials in high frequency as well as power devices creates new challenges in the handling of extremely fragile and costly substrates.
Weixlberger, J., Lindner, P.
openaire   +1 more source

Chemical Lift-Off Lithography of Metal and Semiconductor Surfaces [PDF]

ACS Materials Letters, 2019
Chemical lift-off lithography (CLL) is a subtractive soft-lithographic technique that uses polydimethylsiloxane (PDMS) stamps to pattern self-assembled monolayers of functional molecules for applications ranging from biomolecule patterning to transistor fabrication.
Kevin M. Cheung, Dominik M. Stemer, Chuanzhen Zhao, Thomas D. Young, Jason N. Belling, Anne M. Andrews, Paul S. Weiss   +6 more
openaire   +4 more sources

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

n‐Type Polymer Radio Frequency Rectifiers Operating at 18.5 GHz

Advanced Materials, EarlyView.
Combining an n‐doped polymer semiconductor with wafer‐scale asymmetric planar electrodes featuring work function‐engineered contacts yields radio‐frequency diodes and rectifying circuits operating at up to 18.5 GHz. The devices combine scalable manufacturing with an operating frequency previously unattainable by large‐area organic electronics ...
Lazaros Panagiotidis, Filip Aniés, Yiyang Yu, Mohammed Ghadiyali, Hendrik Faber, Zhanibek Bizak, Youssef Kabri, Pavlos Tzourmpakis, Suman Mandal, Linqu Luo, Temur Maksudov, Mohamad Insan Nugraha, Harold F. Mazo‐Mantilla, Patrice Vanelle, Julie Broggi, Khaled N. Salama, Udo Schwingenschlögl, Martin Heeney, Atif Shamim, Thomas D. Anthopoulos   +19 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source