Results 71 to 80 of about 11,779 (261)

Inverse Design of Nanoparticulate Materials

Advanced Materials, EarlyView.
Inverse design shifts nanomaterial development from empirical trial‐and‐error to predictive model‐driven strategies. It can rely on knowledge‐based, data‐based, or hybrid process and property functions. This perspective article provides a practical framework for applying inverse design based on instructive examples. It discusses which modeling approach
Nabi Etienne Traoré, Annika Mauch, Michelle Berthold, Lukas Pflug, Wolfgang Peukert, Nicolas Vogel   +5 more
wiley   +1 more source

Can mems take advantage of advances in semiconductor lithography? [PDF]

2010 IEEE 23rd International Conference on Micro Electro Mechanical Systems (MEMS), 2010
Progress of lithography has helped to spearhead the semiconductor industry to follow Moore's law to sustain improvement of performance and reduction of cost for decades. The MEMS industry, having started later and being less developed in economy of scale, can take advantage of the experience of semiconductor patterning to make MEMS patterning cheaper ...
openaire   +1 more source

Parity‐Dependent THz Harmonic Generation in Electrically Pumped Micro‐Lasers Exploiting Topological Insulator–Metamaterial Gratings

Advanced Materials, EarlyView.
Topological insulator–metamaterials integrated with electrically driven terahertz quantum cascade lasers enable parity‐dependent harmonic generation. Bulk‐dominated Bi2Se3 favors third‐harmonic emission at 9.96 THz, whereas topological‐surface‐state‐dominated Bi2Se3, Bi2Te3, and (Bi,Sb)2Te3 generate strong second harmonics near 6.5 THz.
Alessandra Di Gaspare, Craig S. Knox, Ahmet Yagmur, Sara Ghayeb Zamharir, Lianhe Li, Satoshi Sasaki, A. Giles Davies, Edmund H. Linfield, Joshua R. Freeman, Miriam S. Vitiello   +9 more
wiley   +1 more source

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

Sensors, 2012
This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process.
Chia-Hua Ho, Fu-Liang Yang, Chien-Chao Huang, Jian-Tai Qiu, Jim-Tong Horng, Chao-Hsin Chien, Tsung-Fan Hsieh, Hao-Yu Chen, Chia-Yi Lin, Min-Cheng Chen   +9 more
doaj   +1 more source

Plasmon‐Enhanced Second‐Harmonic Generation in Atomically Thin Crystalline Silver Nanostructures

Advanced Materials, EarlyView.
Atomically thin crystalline silver films combine vertical quantum confinement with lateral plasmonic field enhancement to boost second‐harmonic generation. Nanoribbon and nanotriangle arrays enable geometry‐tunable infrared plasmon resonances, producing strong SHG from deeply subwavelength metallic volumes compatible with silicon‐based nanophotonics ...
Saad Abdullah, Philipp K. Jenke, Andrew P. Weber, Álvaro Rodríguez Echarri, Vahagn Mkhitaryan, Fadil Iyikanat, Frederik Schiller, Philip Walther, J. Enrique Ortega, Lee A. Rozema, F. Javier García de Abajo   +10 more
wiley   +1 more source

Experimental Demonstration of a Multicorrugation-Pitch-Modulated (MCPM) DFB Semiconductor Laser Based on Reconstruction-Equivalent-Chirp Technology

IEEE Photonics Journal, 2015
A multicorrugation-pitch-modulated (MCPM) distributed-feedback semiconductor laser is experimentally demonstrated for the first time to achieve stable single longitudinal mode (SLM) performance.
Jilin Zheng, Yunshan Zhang, Yuechun Shi, Weichun Li, Bocang Qiu, Jun Lu, Tingting Zhang, Xiangfei Chen   +7 more
doaj   +1 more source

Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication

Advanced Materials Interfaces, EarlyView.
Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley   +1 more source

Gate‐Induced Critical Current Modulation in W–C Nanowires: The Role of Fabrication

Advanced Materials Technologies, EarlyView.
Focused ion beam induced deposition (FIBID) enables precise control of superconducting W–C nanowire devices. Introducing a Ga+ focused ion beam (FIB) cleaning step reduces substrate damage and suppresses leakage currents, shifting gating thresholds to higher voltages.
Alba Arroyo‐Fructuoso, Gregor Hlawacek, Rosa Córdoba   +2 more
wiley   +1 more source

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Nature Communications
Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits.
You Meng, Weijun Wang, Rong Fan, Zhengxun Lai, Wei Wang, Dengji Li, Xiaocui Li, Quan Quan, Pengshan Xie, Dong Chen, He Shao, Bowen Li, Zenghui Wu, Zhe Yang, SenPo Yip, Chun-Yuen Wong, Yang Lu, Johnny C. Ho   +17 more
doaj   +1 more source

Recent Advances in Transparent Microelectrode Device Architecture and Fabrication Strategies for Biomedical Applications

Advanced Materials Technologies, EarlyView.
Transparent microelectrode arrays enable simultaneous optical and electrical electrophysiology with high spatiotemporal resolution, allowing multimodal observations of dynamic biological systems. Advances in materials and device architectures improve device performance by addressing key trade‐offs between optical transparency, impedance, and ...
Michael Abraham Listyawan, Tran Bach Dang, Chi Cong Nguyen, Yee Lap Pong, Tianruo Guo, Thanh Nho Do, Hoang‐Phuong Phan   +6 more
wiley   +1 more source